PCMO resistor trimmer

1. A circuit for reversible trimming of a matching resistor to a reference resistor wherein a material of the matching resistor comprises a programmable resistance material, the circuit comprising

a resistor bridge network comprising the reference resistor and the matching resistor;

a comparator circuit in communication with the resistor bridge network for comparing the resistance values of the reference resistor and the matching resistor and for generating a comparing signal indicative of the difference between the reference resistor and the matching resistor; and

a pulse feedback circuit coupled to the resistor bridge network, the feedback circuit coupled to the comparator circuit and providing a pulsed electrical signal to the matching resistor corresponding to the comparing signal.

2. A circuit as in claim 1 wherein the programmable resistance material is selected from the group of materials consisting of a metal-amorphous silicon-metal material, a phase change material and a thin film perovskite material.

3. A circuit as in claim 1 wherein the feedback circuit provides the pulsed electrical signal to modify the resistance of the matching resistor, the pulsed electrical signal having electrical characteristics taken from the group of electrical characteristics consisting of polarity, amplitude and duration, and any combination thereof, corresponding to the comparing signal from the comparator circuit.

4. A circuit as in claim 1 wherein the pulsed electrical signal has a duration of between 100 fs and about 1000 ns, and an amplitude of between 0.1 V and about 100 V.

5. A circuit for reversible trimming of a matching resistor to a reference resistor wherein a material of the matching resistor comprises a programmable resistance material, the circuit comprising

a resistor bridge network comprising the reference resistor and the matching resistor;

a comparator circuit in communication with the resistor bridge network for comparing the resistance values of the reference resistor and the matching resistor and for generating a comparing signal indicative of the difference between the reference resistor and the matching resistor; and a first transmission gate coupled between the resistor bridge network and the input of the comparator circuit;

a pulse feedback circuit coupled to the resistor bridge network, the feedback circuit coupled to the comparator circuit and comprising a second transmission gate;

wherein the first and second transmission gates are controlled such that the first transmission gate is pulsed open for the comparator circuit to compare the resistance values of the resistor bridge network and to generate the comparing signal and the second transmission gate is pulsed open after the close of the first transmission gate to propagate the comparing signal to the resistor bridge network.

6. A circuit as in claim 5 wherein the resistor bridge network includes two resistors with equal resistance, and wherein the matching resistor is a pulse adjustable resistor.

7. A circuit as in claim 5 wherein the comparator circuit is a differential amplifier.

8. A circuit as in claim 5 wherein each of the transmission gates consists of a single transistor.

9. A circuit as in claim 5 further comprising a delay circuit between the output of the comparator circuit and an input of the pulse feedback circuit.

10. A circuit as in claim 5 wherein a pulsed signal to pulse open the first transmission gate has a duration of between 5 ns to 100 ns.

11. A circuit as in claim 5 wherein a pulsed signal to pulse open the first transmission gate has an amplitude of between 0.1 V and about 100 V.

12. A circuit as in claim 5 wherein the programmable resistance material is selected from the group of materials consisting of a metal-amorphous silicon-metal material, a phase change material and a thin film perovskite material.

13. A circuit as in claim 12 wherein the metal-amorphous silicon-metal material comprises boron doped amorphous silicon layer located between two electrodes, one electrode being Cr and the other being V, Co, Ni, Pd, Fe or Mn.

14. A circuit as in claim 12 wherein the phase change material comprises at least one chalcogen and one or more transition metals.

15. A circuit as in claim 12 wherein the thin film perovskite material is selected from a group of materials consisting of colossal magnetoresistive materials and high temperature superconducting materials.

16. A circuit as in claim 12 wherein the thin film perovskite material is selected from a group consisting of PrCaMnO (PCMO), LaCaMnO (LCMO), LaSrMnO (LSMO), LaBaMnO (LBMO), LaPbMnO (LPMO), NdCaMnO (NCMO), NdSrMnO (NSMO), NdPbMnO (NPMO), and LaPrCaMnO (LPCMO), GdBaCoO (GBCO) and mixtures and combinations thereof.

17. A method of reversible trimming of a matching resistor to a reference resistor wherein a material of the matching resistor comprises a programmable resistance material, the method comprising

comparing the matching resistor to the reference resistor;

generating a comparing signal indicative of the difference between the reference resistor and the matching resistor;

applying a pulsed electrical signal to the matching resistor, the pulsed electrical signal corresponding to the comparing signal.

18. A method as in claim 17 further comprising the repetition of the above steps until the resistances of the matching resistor and the reference resistor are matched.

19. The method of claim 17 wherein the programmable resistance material is selected from the group of material consisting of a metal-amorphous silicon-metal material, a phase change material and a thin film perovskite material.

20. A circuit as in claim 17 wherein a feedback circuit provides the pulsed electrical signal to modify the resistance of the matching resistor, the pulsed electrical signal having electrical characteristics taken from the group of electrical characteristics consisting of polarity, amplitude and duration, and any combination thereof, corresponding to the comparing signal from the comparator circuit.