IP Library Granted Patent US 7,372,206
Granted Patent B2
US 7,372,206 · App. 10/627,727 · Granted May 13, 2008

Gas discharge panel substrate assembly having protective layer in contact with discharge space, and AC type gas discharge panel having the assembly

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Quick Facts
Patent No.
US 7,372,206
App. No.
10/627,727
Granted
May 13, 2008
Kind
B2
Abstract

The present invention provides that a gas discharge panel substrate assembly comprising: electrodes formed on a substrate, a dielectric layer covering the electrodes, and a protective layer covering the dielectric layer and in contact with a discharge space, wherein the protective layer includes MgO and at least one compound selected from the group consisting of an Al compound, a Ti compound, a Y compound, a Zn compound, a Zr compound, a Ta compound and SiC.

Claims (36)

1. A gas discharge panel substrate assembly comprising:

electrodes formed on a substrate,

a dielectric layer covering the electrodes, and

a protective layer covering the dielectric layer and in contact with a discharge space, wherein

the protective layer includes MgO and at least one compound selected from the group consisting of an Al compound, a Y compound, a Ti compound, a Zn compound, a Zr compound, a Ta compound and SiC, and has an ultraviolet shielding function, and

the dielectric layer is a SiO 2 film, having bonds of hydrogen with silicon as a residual in the film, of a thickness in a range of 5 to 15 μm.

2. A gas discharge panel substrate assembly of claim 1 , wherein the protective layer comprises a layer which shields the dielectric layer of the SiO 2 film from light having a wavelength of 200 nm or less generated by a discharge in the discharge space.

3. A gas discharge panel substrate assembly of claim 1 , wherein said at least one compound is a compound having a bandgap of 6.2 eV.

4. A gas discharge panel substrate assembly of claim 1 , wherein the dielectric layer contains a hydrocarbon bond therein.

5. A gas discharge panel substrate assembly comprising:

electrodes formed on a substrate,

a dielectric layer formed on the substrate so as to cover the electrodes and made of a SiO 2 film, having bonds of hydrogen with silicon as a residual in the film, of a thickness in a range of 5 to 15 μm,

an ultraviolet shielding layer formed on the dielectric layer and made of a compound having an ultraviolet shielding function to shield the dielectric layer from ultraviolet light generated by a discharge in a discharge space of the assembly, the compound being selected from the group consisting of an Al compound, a Y compound, a Ti compound, a Zn compound, a Zr compound, a Ta compound and SiC, and

a protective layer formed on the ultraviolet shielding layer and made of MgO.

6. A gas discharge panel substrate assembly of claim 5 , wherein the ultraviolet shielding layer shields the dielectric layer from ultraviolet light having a wavelength of 200 nm or less.

7. A gas discharge panel substrate assembly of claim 5 , wherein the dielectric layer contains a hydrocarbon bond therein.

8. An AC type gas discharge panel comprising:

a front substrate having display electrodes;

a dielectric layer covering the display electrodes, the dielectric layer having a thickness in a range of 5 to 15 μm, and being a SiO 2 film having bonds of hydrogen with silicon as a residual therein;

a back substrate having a phosphor;

a discharge space between the front substrate and the back substrate and having a discharge gas sealed therein; and

an ultraviolet shielding layer formed on the SiO 2 film and containing a compound which shields the SiO 2 film from ultraviolet light generated by a discharge in the discharge space and is selected from the group consisting of an Al compound, a Y compound, a Ti compound, a Zn compound, a Zr compound, a Ta compound and SiC.

9. An AC type gas discharge panel comprising:

a front substrate having display electrodes;

a dielectric layer covering the display electrodes, having a thickness in a range of 5 to 15 μm, and being a SiO 2 film having bonds of hydrogen with silicon as a residual therein;

a back substrate having a phosphor;

a discharge space between the front substrate and the back substrate and having a discharge gas sealed therein;

a protective layer covering a surface of the dielectric layer facing the discharge space and made of MgO; and

an ultraviolet shielding layer formed between the SiO 2 film and the protective layer,

wherein the ultraviolet shielding layer shields the dielectric layer from ultraviolet light generated by a discharge in the discharge space and contains a compound selected from the group consisting of an Al compound, a Y compound, a Zn compound, a Zr compound, a Ta compound and SiC.

10. A gas discharge panel substrate assembly comprising:

electrodes formed on a glass substrate;

a dielectric layer made of a sheet frit glass formed on the substrate by baking, being a SiO 2 film containing bonds of hydrogen with silicon as a residual therein, and having a thickness in a range of5to 15 μm;

an intermediate layer formed on the dielectric layer and shielding the dielectric layer from vacuum ultraviolet light generated by a discharge in a discharge space of the assembly, the intermediate layer being made of at least one compound selected from the group consisting of an Al compound, a Y compound, a Ti compound, a Zn compound, a Zr compound, a Ta compound and SiC; and

a protective layer covering the intermediate layer and made of MgO.

11. A gas discharge panel substrate assembly of claim 10 , wherein the intermediate layer is a ZrO 2 layer.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2018
From: HITACHI MAXELL, LTD.
To: MAXELL, LTD.
Reel/Frame 045142/0208 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 12, 2013
From: HITACHI, LTD.
To: HITACHI CONSUMER ELECTRONICS CO., LTD.
Reel/Frame 030668/0719 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2013
From: HITACHI PLASMA PATENT LICENSING CO., LTD.
To: HITACHI CONSUMER ELECTRONICS CO., LTD.
Reel/Frame 030074/0077 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2012
From: HITACHI PLASMA DISPLAY LIMITED
To: HITACHI, LTD.
Reel/Frame 027840/0962 →
CHANGE OF NAME Recorded Mar 2, 2012
From: FUJITSU HITACHI PLASMA DISPLAY LIMITED
To: HTACHI PLASMA DISPLAY LIMITED
Reel/Frame 027801/0600 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 29, 2008
From: HITACHI LTD.
To: HITACHI PLASMA PATENT LICENSING CO., LTD.
Reel/Frame 021785/0276 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2005
From: FUJITSU LIMITED
To: HITACHI, LTD.
Reel/Frame 017136/0874 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2003
From: INOUE, KAZUNORI; KASAHARA, SHIGEO; SAKITA, KOICHI; TOYODA, OSAMU; HASEGAWA, MINORU; HARADA, HIDEKI; BETSUI, KEIICHI
To: FUJITSU LIMITED; FUJITSU HITACHI PLASMA DISPLAY LIMITED
Reel/Frame 014360/0987 →