Method for improving film uniformity in plasma enhanced chemical vapor deposition system
A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber includes the following steps before a deposition procedure. Firstly, a cleaning procedure is performed to remove particles adhered onto an internal wall of the deposition chamber. Then, a pre-deposition procedure is performed to isolate contaminants generated during the clearing procedure. Afterward, a specified gas is introduced into the deposition chamber so as to stabilize a condition inside the deposition chamber.
1 . A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber, said method comprising, before a deposition procedure, steps of:
performing a cleaning procedure to remove particles adhered onto an internal wall of said deposition chamber;
performing a pre-deposition procedure to isolate contaminants generated during said cleaning procedure; and
introducing a specified gas into said deposition chamber so as to stabilize a condition inside said deposition chamber.
2 . The method according to claim 1 wherein said contaminants include fluoride.
3 . The method according to claim 1 wherein said specified gas comprises at least a nitrogen gas.
4 . The method according to claim 1 wherein said specified gas comprises at least an argon gas.
5 . The method according to claim 1 wherein said specified gas comprises at least a hydrogen gas.
6 . The method according to claim 1 wherein said condition to be stabilized is the temperature distribution condition in said deposition chamber.
7 . The method according to claim 1 wherein said condition to be stabilized is the contaminant concentration in said deposition chamber.
8 . The method according to claim 1 wherein said cleaning procedure is performed by introducing a nitrogen fluoride gas into said deposition chamber.
9 . The method according to claim 1 wherein said pre-deposition procedure is performed by introducing a reaction gas without placing any substrate into said deposition chamber.
10 . The method according to claim 1 further comprising a step of idling said deposition chamber for a specified period of time for stabilizing temperature distribution in said deposition chamber.
11 . A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber, said method comprising, before a deposition procedure, steps of:
performing a cleaning procedure to remove particles adhered onto an internal wall of said deposition chamber;
performing a pre-deposition procedure to isolate contaminants generated during said cleaning procedure; and
idling said deposition chamber for a specified period of time so as to stabilize a condition inside said deposition chamber.
12 . The method according to claim 11 wherein said condition to be stabilized is the temperature distribution condition of said deposition chamber.
13 . The method according to claim 11 further comprising a step of introducing a specified gas into said deposition chamber so as to dilute said contaminants inside said deposition chamber.
14 . The method according to claim 11 wherein said cleaning procedure is performed by introducing a nitrogen fluoride gas into said deposition chamber.
15 . The method according to claim 11 wherein said pre-deposition procedure is performed by introducing a reaction gas without placing any substrate into said deposition chamber.
16 . The method according to claim 11 wherein said specified period of time is ranged from 1 minute to 20 minutes.
17 . A method for improving uniformity of a film in a plasma enhanced chemical vapor deposition system in a deposition chamber, said method comprising, before a deposition procedure, steps of:
performing a cleaning procedure to remove particles adhered onto an internal wall of said deposition chamber;
performing a pre-deposition procedure to isolate contaminants generated during said cleaning procedure; and
diluting contaminants in said deposition chamber so as to stabilize a condition inside said deposition chamber.
18 . The method according to claim 17 wherein said contaminants are diluted with an introduced gas.
19 . The method according to claim 17 wherein said introduced gas includes at least a gas selected from a group consisting of nitrogen, argon, hydrogen and a combination thereof.
20 . The method according to claim 17 further comprising a step of idling said deposition chamber for a specified period of time for stabilizing a temperature distribution of said deposition chamber.
21 . The method according to claim 20 wherein said specified period of time is ranged from 1 minute to 20 minutes.