Liquid crystal display device and method of fabricating the same

1. A method of fabricating a liquid crystal display device, comprising:

forming a gate electrode on a first substrate using a first hydrophilic TiO 2 pattern forming the gate electrode including: forming a metal layer on the first substrate, forming a hydrophobic TiO 2 masking layer on the metal layer, the hydrophobic TiO 2 masking layer having first and second parts, exposing the first part of the hydrophobic TiO 2 masking layer to light to form a hydrophilic TiO 2 layer, forming the first hydrophilic TiO 2 pattern by etching the second part of the hydrophobic TiO 2 masking layer, etching the metal layer using the first hydrophilic TiO 2 pattern as a mask to form the gate electrode and the first hydrophilic TiO 2 pattern on a surface of the gate electrode;

forming a gate insulating layer on the first substrate, the first hydrophilic TiO 2 pattern disposed between the gate electrode and the gate insulating layer;

forming a semiconductor layer on the gate insulating layer;

forming source and drain electrodes on the semiconductor layer;

forming a passivation layer on the first substrate; and

forming a pixel electrode on the passivation layer.

2. The method according to claims 1 , wherein the light includes one of ultraviolet light and laser light.

3. The method according to claims 1 , wherein the second part of the hydrophobic TiO 2 layer is etched by an etching solution that includes H 2 SO 4 .

4. The method according to claims 1 , wherein the second part of the hydrophobic TiO 2 layer is etched by an alkali based etching solution.

5. The method according to claim 1 , wherein forming the semiconductor layer includes:

forming the semiconductor layer on the gate insulating layer;

forming a second hydrophobic TiO 2 layer on the semiconductor layer;

exposing first part of the hydrophobic TiO 2 layer on the semiconductor layer to light to form a hydrophilic TiO 2 layer on the semiconductor layer;

forming a second hydrophilic TiO 2 pattern by etching unexposed portions of the hydrophobic TiO 2 layer on the semiconductor layer to remove the unexposed portions of the hydrophobic TiO 2 layer on the semiconductor layer; and

etching the semiconductor layer using the second hydrophilic TiO 2 pattern as a mask.

6. The method according to claim 1 , wherein forming the source and drain electrodes includes:

forming an additional metal layer on the semiconductor layer;

forming a hydrophobic TiO 2 layer on the additional metal layer;

exposing a first part of the hydrophobic TiO 2 layer on the addition metal layer to light to form a hydrophilic TiO 2 layer on the on the additional metal layer

forming a third hydrophilic TiO 2 pattern by etching the hydrophobic TiO 2 layer on the additional metal to remove a second part of the hydrophobic TiO 2 layer on the additional metal layer; and

etching the additional metal layer using the third hydrophilic TiO 2 pattern as a mask.

7. The method according to claim 1 , wherein forming the pixel electrode includes:

forming an indium tin oxide layer on the passivation layer;

forming a hydrophobic TiO 2 layer on the indium tin oxide layer;

exposing a first part of the hydrophobic TiO 2 layer on the indium tin oxide layer to light to form a hydrophilic TiO 2 layer on the indium tin oxide layer;

forming a fourth hydrophobic TiO 2 pattern by etching the hydrophobic TiO 2 layer on the indium tin oxide layer to remove a second part of the hydrophobic TiO 2 layer on the indium tin oxide layer; and

etching the indium tin oxide layer using the fourth hydrophilic TiO 2 pattern as a mask.

8. The method according to claim 1 , further comprising forming a contact hole in the passivation layer to interconnect the pixel electrode to the drain electrode.

9. The method according to claim 1 , further comprising:

forming a black matrix and a color filter layer on a second substrate;

bonding the first substrate and the second substrate together; and

forming a liquid crystal material layer between the first and second substrates.