Dielectric device having dielectric film terminated by halogen atoms
View Patent ↗A dielectric device having excellent characteristics is provided. This dielectric device comprises such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms and a dielectric film formed on the surface of the first electrode layer terminated by the halogen atoms. When the constituent elements for the first electrode layer located on the surface thereof are terminated by the halogen atoms in order to form a ferroelectric film having a bismuth layer structure, therefore, Bi constituting the ferroelectric film is inhibited from bonding to the constituent elements located on the surface of the first electrode layer.
1. A dielectric device comprising:
such a first electrode layer that constituent elements located on its surface are terminated by halogen atoms; and
a dielectric film formed on the surface of said first electrode layer terminated by said halogen atoms,
wherein said first electrode layer contains at least one element selected from a group consisting of Pt, Ir, Pd and Ru and said halogen atoms are fluorine atoms.
2. The dielectric device according to claim 1 , wherein said first electrode layer contains Pt, and platinum fluoride is formed on the surface of said first electrode layer.
3. The dielectric device according to claim 1 , wherein said dielectric film includes a ferroelectric film having a bismuth layer structure.
4. The dielectric device according to claim 3 , wherein said dielectric film having a bismuth layer structure is an SrBi 2 Ta 2 O 9 (SBT) film.
5. The dielectric device according to claim 3 , wherein a bismuth layer is formed to be substantially perpendicular to said first electrode layer in said ferroelectric film having a bismuth layer structure.
6. The dielectric device according to claim 1 , further comprising a second electrode layer formed on said dielectric film.
7. The dielectric device according to claim 1 , further comprising an adherent layer formed under said first electrode layer.
8. The dielectric device according to claim 7 , wherein said adherent layer includes an IrSiN film.