IP Library Granted Patent US 6,968,617
Granted Patent B2
US 6,968,617 · App. 10/633,098 · Granted Nov 29, 2005

Methods of fabricating fluid ejection devices

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Quick Facts
Patent No.
US 6,968,617
App. No.
10/633,098
Granted
Nov 29, 2005
Kind
B2
Abstract

In one example embodiment, a method of fabricating a fluid ejection device is provided. The method can including fabricating a thinflim structure on a device substrate and forming a peripheral break trench structure in a first surface of the substrate circumscribing a region in which a feed slot is to be formed through the substrate. Subsequently the substrate can be abrasively machined from a second surface of the substrate to the break trench structure to form the feed slot.

Claims (28)

1. A method of fabricating a fluid ejection device, comprising:

fabricating a thinfilm structure on a device substrate;

forming a peripheral break trench structure in a first surface of the substrate circumscribing a region in which a feed slot is to be formed through the substrate;

forming a guide break trench in said first surface within the peripheral break trench structure; and

subsequently abrasively machining the substrate from a second surface of the substrate to the break trench structure to form the feed slot.

2. The method of claim 1 further comprising:

applying a barrier layer to the thinfilm structure after forming the break trench structure and before abrasively machining the substrate.

3. The method of claim 1 wherein said fabricating the thinfilm structure includes fabricating the thinfilm structure on said first surface of the substrate.

4. The method of claim 1 wherein said forming a break trench structure includes anisotropically etching the trench during a wet etch process.

5. The method of claim 1 , wherein said guide break trench structure is formed to a depth deeper than a depth of said peripheral break trench structure.

6. The method of claim 5 , wherein the guide break trench structure is formed a trench width greater than a width of the peripheral break trench structure.

7. The method of claim 1 , wherein the substrate is a silicon substrate and wherein said forming a break trench structure includes:

etching the silicon substrate with a TMAH (Tetra Methyl Ammonium Hydroxide) wet etch process.

8. The method of claim 1 , further comprising:

fabricating the thinfilm structure on the device substrate for a plurality of fluid ejection devices to be formed on the substrate, where the substrate is a wafer;

attaching an orifice plate structure for each of the fluid ejection devices to be formed on the wafer;

sawing the wafer to separate individual fluid ejection devices; and

attaching the fluid ejection devices to device circuitry on the wafer.

9. A method of fabricating a fluid ejection device, comprising:

fabricating a thinfilm structure on a device substrate;

forming a break trench structure in a first surface of the substrate, said structure comprising a plurality of small break trenches arranged along a slot axis;

subsequently abrasively machining the substrate from a second surface of the substrate to the plurality of break trenches to form a plurality of small feed slots through the substrate; and

defining a plurality of the small substrate islands in areas separating the small slots.

10. The method of claim 9 , wherein said defining a plurality of small substrate islands comprises:

forming a mask structure defining the islands;

etching the first surface through the mask structure to define the plurality of small substrate islands.

11. The method of claim 9 , wherein said substrate is a silicon substrate, and wherein said forming a break trench structure includes:

etching the silicon substrate with a TMAH (Tetra Methyl Ammonium Hydroxide) wet etch process.