IP Library Granted Patent US 6,940,218
Granted Patent B2
US 6,940,218 · App. 10/637,404 · Granted Sep 6, 2005

Doped field-emitter

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Quick Facts
Patent No.
US 6,940,218
App. No.
10/637,404
Granted
Sep 6, 2005
Kind
B2
Abstract

A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.

Claims (19)

1. A field-emission electron source element comprising:

a cathode substrate;

an insulating layer that is formed on the cathode substrate and has an opening;

a lead electrode formed on the insulating layer; and

an emitter formed in the opening;

wherein a surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide.

2. The field-emission electron source element according to claim 1 , wherein the emitter is formed of a material containing silicon.

3. The field-emission electron source element according to claim 1 , wherein the emitter is formed of metal, and a thin film containing silicon is formed on a surface of the metal.

4. The field-emission electron source element according to claim 1 , wherein the surface layer has a thickness of 5 nm to 30 nm.

5. The field-emission electron source element according to claim 1 , wherein the doping with the reducing element is carried out by ion doping.

6. The field-emission electron source element according to claim 1 , wherein the doping with the reducing element is carried out by plasma doping.

7. An image display apparatus comprising the field-emission electron source element according to claim 1 .

8. An image display apparatus comprising:

a vacuum container;

an electron gun disposed inside the vacuum container;

a member for deflecting an electron beam emitted from the electron gun; and

a phosphor layer provided at a position facing the electron gun;

wherein the electron gun comprises the field-emission electron source element according to claim 1 , and

the image display apparatus comprises a system for controlling an atmosphere inside the vacuum container to be an atmosphere having a reducing effect on a material for the emitter of the field-emission electron source element.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 29, 2014
From: PANASONIC CORPORATION
To: PHC HOLDINGS CO., LTD.
Reel/Frame 032785/0498 →
CHANGE OF NAME Recorded Apr 29, 2014
From: PHC HOLDINGS CO., LTD.
To: PANASONIC HEALTHCARE HOLDINGS CO., LTD.
Reel/Frame 032785/0563 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 19, 2014
From: PANASONIC HEALTHCARE CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 032480/0433 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2014
From: PANASONIC CORPORATION
To: PANASONIC HEALTHCARE CO., LTD.
Reel/Frame 032360/0795 →
CHANGE OF NAME Recorded Feb 25, 2014
From: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
To: PANASONIC CORPORATION
Reel/Frame 032332/0082 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2003
From: KOGA, KEISUKE; KAWASE, TORU; HONDA, KENICHI; NORIKANE, TETSUYA
To: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Reel/Frame 014387/0182 →