Thin-film semiconductor device and liquid crystal display
View Patent ↗A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of the plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of p-type thin-film transistors (TFT) is in a range of about 3E+19/cm 3 to 1E+20/cm 3 .
1. A thin-film semiconductor device comprising:
a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
wherein an electric field of a gate insulated at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 1 MV/cm to 2 MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm 3 to 1E+20/cm 3 .
2. The thin-film semiconductor device according to claim 1 ,
wherein said first plurality of thin-film transistors comprising N-type and P-type thin-film transistors have a lower driving voltage than said second plurality of thin-film transistors comprising N-type and P-type thin film transistor.
3. The thin-film semiconductor device according to claim 2 ,
wherein at least one N-type thin-film transistor of said second plurality of thin-film transistors have a lightly-doped drain structure.
4. The thin-film semiconductor device according to claim 1 ,
wherein a plurality of gate insulating films of said first and second plurality of thin-film transistors have substantially the same thickness.
5. A liquid crystal display comprising:
a thin-film semiconductor device according to claim 1 ; and
a driver circuit.
6. A thin-film semiconductor device comprising:
a first plurality of thin-film transistors having different driving voltages than a second plurality of thin-film transistors, wherein said first and second plurality of transistors are formed on a glass substrate,
wherein an electric field of a gate insulator at each of said driving voltages of said first and second plurality of thin-film transistors is in a range of about 0.2 MV/cm to 0.8 MV/cm, and a drain concentration of P-type thin-film transistors is in a range of about 3E+19/cm 3 to 1E+20/cm 3 .
7. The thin-film semiconductor device according to claim 6 ,
wherein said first and second plurality of thin-film transistors comprising N-type and P-type thin-film transistors have a lower driving voltage than said second plurality of thin-film transistors comprising N-type and P-type thin film transistor.
8. The thin-film semiconductor device according to claim 6 ,
wherein a plurality of gate insulating films of said first and second plurality of thin-film transistors has substantially the same thickness.
9. The thin-film semiconductor device according to claim 7 ,
wherein at least one N-type thin-film transistor of said second plurality of thin-film transistors have a lightly-doped drain structure.