Liquid crystal display device having reduced optical pumping current and method of fabricating the same
View Patent ↗The present invention relates to a liquid crystal display and a method of fabricating the same that is capable of reducing an optical pumping current. The liquid crystal display comprises a gate line having a bending part in at least one side, a data line crossing the gate line on the first substrate, a pixel electrode formed at a pixel area defined by the gate line and the data line, a drain electrode of a thin film transistor connected to the pixel electrode, and a semiconductor layer overlapping at least a part of the gate line, the drain electrode, and the data line to form a channel of the thin film transistor, wherein the bending part is disposed between the drain electrode and the data line.
1. A liquid crystal display device, comprising:
a gate line having a bending part in at least one side;
a data line crossing the gate line on the first substrate;
a pixel electrode formed at a pixel area defined by the gate line and the data line;
a drain electrode of a thin film transistor connected to the pixel electrode, the drain electrode having a first part extending along a direction of the gate line and a second part extending at an angle from the first part; and
a semiconductor layer overlapping at least part of the gate line, the drain electrode, and the data line to form a channel of the thin film transistor,
wherein the bending part is disposed between the second part of the drain electrode and the data line.
2. The device according to claim 1 , further comprising a gate insulating film having a plurality of projections and a plurality of grooves.
3. The device according to claim 2 , wherein the bending part of the gate line includes the projections and grooves.
4. The device according to claim 2 , further comprising a protective film on an entire surface of the first substrate.
5. The device according to claim 4 , wherein the protective film includes a plurality of projections and grooves corresponding to the projections and grooves of the gate insulating film.
6. The device according to claim 1 , further comprising an ohmic contact layer on the semiconductor layer.
7. The device according to claim 1 , wherein the second part of the drain electrode overlaps an edge portion of the gate line.
8. The device according to claim 7 , wherein the data line functions as a semiconductor source region of the thin film transistor.
9. The device according to claim 1 , wherein the gate line covers the channel of the thin film transistor.
10. A method of fabricating a liquid crystal display device, comprising steps of:
forming a gate line having a plurality of dot patterns on a first substrate;
forming a gate insulating film to cover the gate line on the first substrate;
forming a semiconductor layer having a first width overlapping a second width of the gate line, the first width less than the second width;
forming a data line crossing the gate line;
forming a drain electrode facing the data line, the drain electrode having a first part extending along a direction of the gate line and a second part extending at an angle from the first part with the dot pattern therebetween;
forming a protective film having a contact hole to expose the drain electrode; and
forming a pixel electrode on the protective film connected to the drain electrode.
11. The method according to claim 10 , wherein the step of forming the gate insulating film includes forming a plurality of projections and a plurality of grooves.
12. The method according to claim 11 , wherein the plurality of projections and grooves correspond to the plurality of dot patterns.
13. The method according to claim 12 , wherein the protective film includes a plurality of projections and grooves corresponding to the projections and grooves of the gate insulating film.
14. The method according to claim 10 , wherein the second part of the drain electrode overlaps an edge portion of the gate line.
15. The method according to claim 14 , wherein the data line functions as a semiconductor source region of the thin film transistor.
16. The method according to claim 10 , further comprising forming an ohmic contact layer on the semiconductor layer.
17. The method according to claim 10 , wherein the rate line covers a channel region of the semiconductor layer.
18. The method according to claim 10 , wherein the steps of forming a data line and a drain electrode are performed simultaneously.
19. The method according to claim 18 , wherein the simultaneous formation of the data line and the drain electrode includes a mask having a shield portion, a semi-transparent portion, and a full exposure portion.