Thin film transistor, image display device, and image display apparatus
View Patent ↗A thin film transistor is circular when viewed from top. A first source/drain region is disposed at the center, a semiconductor layer surrounds the first source/drain region and overlaps with an external periphery of the first source/drain region, and a second source/drain region surrounds the semiconductor layer and overlaps the external periphery of the semiconductor layer. The potential of the second source/drain region is set higher than the potential of the first source/drain region. The external periphery of the first source/drain region and the internal periphery of the second source/drain region have concentric circular shapes.
1. A thin film transistor comprising:
a first source/drain electrode;
a first source/drain region that is connected to the first source/drain electrode, wherein the first source/drain region has a first potential, wherein the first source/drain region has an external periphery;
a second source/drain electrode;
a second source/drain region that is connected to the second source/drain electrode, wherein the second source/drain region has an internal periphery that surrounds the external periphery of the first source/drain region, wherein at least during the operation the second source/drain region has a second potential that is higher than the first potential;
a semiconductor layer that is disposed between the first source/drain region and the second source/drain region; and
a gate electrode that induces a channel in the semiconductor layer
wherein the semiconductor layer is disposed between the gate electrode and the first and second source/drain electrodes.
2. The thin film transistor according to claim 1 , wherein
the external periphery of the first source/drain region and the internal periphery of the second source/drain region are concentric circles.
3. The thin film transistor according to claim 1 , wherein
the external periphery of the first source/drain region and the internal periphery of the second source/drain region are substantially elliptical.
4. The thin film transistor according to claim 1 , wherein
the semiconductor layer is made of non-monocrystalline silicon.
5. An image display device comprising:
a light-emitting device;
a first thin film transistor that controls a light emission state of the light-emitting device, wherein the first thin film transistor includes
a first source/drain electrode;
a first source/drain region that is connected to the first source/drain electrode, wherein the first source/drain region has a first potential, wherein the first source/drain region has an external periphery;
a second source/drain electrode;
a second source/drain region that is connected to the second source/drain electrode, wherein the second source/drain region has an internal periphery that surrounds the external periphery of the first source/drain region, wherein at least during the operation the second source/drain region has a second potential that is higher than the first potential;
a semiconductor layer that is disposed between the first source/drain region and the second source/drain region; and
a gate electrode that induces a channel in the semiconductor layer;
a second thin film transistor that controls a gate potential of the first thin film transistor; and
a capacitor that holds the gate potential of the first thin film transistor controlled by the first thin film transistor.
6. The image display device according to claim 5 , wherein
the light-emitting device is an organic light emitting diode, and any one of the first source/drain electrode and the second source/drain electrode of the first thin film transistor is connected to the organic light emitting diode, and the first thin film transistor controls flow of a current to the organic light emitting diode.
7. The image display device according to claim 5 , further comprising:
a scan line that supplies a scan signal, and a data line that supplies a display signal, wherein
the gate electrode of the second thin film transistor is connected to the scan line, and the second thin film transistor has a source/drain electrode that is connected to the data line.
8. An image display apparatus comprising:
a plurality of scan lines and a plurality of data lines that are disposed in a matrix form and are connected to driving circuits respectively;
light-emitting devices that are disposed corresponding to display pixels;
power source lines that supply a current to the light-emitting devices;
a first thin film transistor that is disposed between each light-emitting device and each power source line and that controls a light emission state of the light-emitting device, wherein the first thin film transistor includes
a first source/drain electrode;
a first source/drain region that is connected to the first source/drain electrode, wherein the first source/drain region has a first potential, wherein the first source/drain region has an external periphery;
a second source/drain electrode;
a second source/drain region that is connected to the second source/dram electrode, wherein the second source/drain region has an internal periphery that surrounds the external periphery of the first source/drain region, wherein at least during the operation the second source/drain region has a second potential that is higher than the first potential;
a semiconductor layer that is disposed between the first source/drain region and the second source/drain region; and
a gate electrode that induces a channel in the semiconductor layer; and
a second thin film transistor that is disposed between the gate electrode of the first thin film transistor and a predetermined data line, and that controls a gate potential of the first thin film transistor.
9. The image display apparatus according to claim 8 , wherein
the light-emitting device is an organic light emitting diode, and
any one of the first source/drain electrode and the second source/drain electrode of the first thin film transistor is connected to the light-emitting device.
10. The thin film transistor of claim 1 , wherein the semiconductor layer is disposed between the gate electrode and the first and second source/drain electrodes in a cross-sectional view of the thin film transistor, the cross-sectional view being perpendicular to a plan view of the thin film transistor.
11. The thin film transistor of claim 1 , wherein the internal periphery of the second source/drain region surrounds the external periphery of the first source/drain region in a plan view of the thin film transistor.
12. The thin film transistor of claim 1 , wherein the semiconductor layer is disposed between the first source/drain region and the second source/drain region in a plan view of the thin film transistor.