Magnetic memory element with vortex magnetization to control magnetization rotation and prevent leakage of magnetic flux
View Patent ↗A magnetic memory is composed of a ring-shaped magnetic layer that includes a notch having a circular arc shape. The notch is formed by partially cutting out the periphery of the ring-shaped magnetic layer. A ratio h/H 1 for the magnetic layer is set to be equal to or greater than 0.01 where “h” is the height of the notch and “H 1 ” is the outer diameter of the magnetic layer.
1. A magnetic memory comprising a ring-shaped magnetic layer having a notch formed by partially cutting out a periphery of the ring-shaped magnetic layer in circular arc shape,
wherein if a height of said notch formed at the periphery of said magnetic layer is defined as “h” and an outer diameter of said magnetic layer is defined at “H 1 ”, a ratio (h/H 1 ) is equal to or greater than 0.01.
2. The magnetic memory as defined in claim 1 , wherein said magnetic layer is made from room temperature ferromagnetic material.
3. The magnetic memory as defined in claim 1 , wherein a thickness of said magnetic layer is set within 1-10 nm.
4. The magnetic memory as defined in claim 1 , wherein a direction of magnetization of said magnetic layer is set to right-handed (clockwise) direction or left-handed (anticlockwise) direction in said magnetic layer.
5. The magnetic memory as defined in claim 1 , further comprising a ring-shaped additional magnetic layer on said magnetic layer via a non-magnetic layer.
6. The magnetic memory as defined in claim 5 , wherein said additional magnetic layer is made from room temperature ferromagnetic material.
7. The magnetic memory as defined in claim 5 , wherein a thickness of said additional magnetic layer is set within 1-10 nm.
8. The magnetic memory as defined in claim 5 , further comprising an antiferromagnetic layer formed on a main surface of said additional magnetic layer opposite to said magnetic layer.
9. The magnetic memory as defined in claim 5 , wherein a direction of the magnetization of said additional magnetic layer is set to right-handed (clockwise) direction or left-handed (anticlockwise) direction in said additional magnetic layer.
10. The magnetic memory as defined in claim 8 , wherein a direction of the magnetization of said additional magnetic layer is pinned.
11. A magnetic memory array comprising a plurality of magnetic memories arranged regularly, each magnetic memory being defined in claim 1 .
12. A method for recording in a magnetic memory with a ring-shaped magnetic layer, comprising the steps of:
partially cutting out a periphery of said magnetic layer in circular arc shape to form a notch in the periphery of said magnetic layer, and
magnetizing said magnetic layer in right-handed (clockwise) direction or left-handed (anticlockwise) direction therein to record information “0” or “1” therein,
wherein if a height of said notch formed at the periphery of said magnetic layer is defined as “h” and an outer diameter of said magnetic layer is defined as “H 1 ”, a ratio (h/H 1 ) is equal to or greater than 0.01.
13. The recording method as defined in claim 12 , wherein said magnetic layer is made from room temperature ferromagnetic material.
14. The recording method as defined in claim 12 , wherein a thickness of said magnetic layer is set within 1-10 nm.
15. A method for reading from a magnetic memory with a ring-shaped magnetic layer, comprising the steps of:
partially cutting out a periphery of said magnetic layer in circular arc shape to form a notch in the periphery of said magnetic layer,
forming a ring-shaped additional magnetic layer on said magnetic layer via a non-magnetic layer,
magnetizing in advance said additional magnetic layer in right-handed (clockwise) direction or left-handed (anticlockwise) direction therein,
magnetizing said magnetic layer in right-handed (clockwise) direction or left-handed (anticlockwise) direction therein to record information “0” or “1” therein, and
reading said information recorded in said magnetic layer on a change in current due to a change in electric resistance depending on a relative position in magnetization between said magnetic layer and said additional magnetic layer,
wherein if a height of said notch formed at the periphery of said magnetic layer is defined as “h” and an outer diameter of said magnetic layer is defined as “H 1 ”, a ratio (h/H 1 ) is equal to or greater than 0.01.
16. The reading method as defined in claim 15 , further comprising the step of forming an antiferromagnetic layer on a main surface of said additional magnetic layer opposite to said magnetic layer, thereby to pin a direction of magnetization of said additional magnetic layer.
17. The reading method as defined in claim 15 , wherein said magnetic layer is made from room temperature ferromagnetic material.
18. The reading method as defined in claim 15 , wherein a thickness of said magnetic layer is set within 1-10 nm.
19. The reading method as defined in claim 15 , wherein a thickness of said additional magnetic layer is set within 1-10 nm.