Nano-filled composite materials with exceptionally high glass transition temperature
A curable epoxy formulation is provided in the present invention. The formulation comprises an epoxy monomer, an organofunctionalized colloidal silica having a particle size in a range between about 2 nanometers and about 20 nanometers, and optional reagents wherein the organofunctionalized colloidal silica substantially increases the glass transition temperature of the epoxy formulation. Further embodiments of the present invention include a semiconductor package comprising the aforementioned curable epoxy formulation.
1 . A curable epoxy formulation comprising at least one epoxy monomer, at least one organofunctionalized colloidal silica having a particle size in a range between about 2 nanometers and about 20 nanometers, and optional reagents wherein the organofunctionalized colloidal silica substantially increases the glass transition temperature of the epoxy formulation.
2 . The curable epoxy formulation in accordance with claim 1 , wherein the organofunctionalized colloidal silica has a particle size in a range between about 2 nanometers and about 10 nanometers.
3 . The curable epoxy formulation in accordance with claim 1 having a glass transition temperature greater than about 200° C.
4 . The curable epoxy formulation in accordance with claim 3 having a glass transition temperature greater than about 220° C.
5 . The curable epoxy formulation in accordance with claim 1 , wherein the organofunctional colloidal silica comprises up to about 80 weight % of silicon dioxide, based on the total weight of the total curable epoxy formulation.
6 . The curable epoxy formulation in accordance with claim 1 , wherein the colloidal silica is functionalized with an organoalkoxysilane.
7 . The curable epoxy formulation in accordance with claim 6 , wherein the organoalkoxysilane comprises phenyltrimethoxysilane.
8 . The curable epoxy formulation in accordance with claim 6 , wherein the colloidal silica is further functionalized with a capping agent.
9 . The curable epoxy formulation in accordance with claim 8 , wherein the capping agent comprises a silylating agent
10 . The curable epoxy formulation in accordance with claim 9 , wherein the silylating agent comprises hexamethyldisilazane.
11 . The curable epoxy formulation in accordance with claim 1 , further comprising at least one organic diluent.
12 . The curable epoxy formulation in accordance with claim 11 , wherein the organic diluent comprises 3-ethyl-3-hydroxymethyl-oxetane.
13 . The curable epoxy formulation in accordance with claim 1 , wherein the epoxy monomer comprises a cycloaliphatic epoxy monomer, an aliphatic epoxy monomer, an aromatic epoxy monomer, a silicone epoxy monomer, or combinations thereof.
14 . The curable epoxy formulation in accordance with claim 1 , wherein the optional reagent comprises an alkyl onium cure catalyst.
15 . The curable epoxy formulation in accordance with claim 14 , wherein the alkyl onium catalyst comprises bisaryliodonium hexafluoroantimonate.
16 . The curable epoxy formulation in accordance with claim 14 , wherein the optional reagent further comprises an effective amount of a free-radical generating compound.
17 . The curable epoxy formulation in accordance with claim 1 , wherein the optional reagent comprises at least one epoxy hardener.
18 . The curable epoxy formulation in accordance with claim 17 , wherein the epoxy hardener comprises an anhydride curing agent, a phenolic resin, an amine epoxy hardener, or combinations thereof.
19 . The curable epoxy formulation in accordance with claim 18 , wherein the epoxy hardener comprises an anhydride curing agent.
20 . The curable epoxy formulation in accordance with claim 19 , wherein the anhydride curing agent comprises methylhexahydrophthalic anhydride.
21 . The curable epoxy formulation in accordance with claim 17 , wherein the optional reagent further comprises a cure catalyst comprising amines, phosphines, metal salts, salts of a nitrogen-containing compounds, or combinations thereof.
22 . The curable epoxy formulation in accordance with claim 21 , wherein the cure catalyst comprises salts of a nitrogen-containing compound.
23 . The curable epoxy formulation in accordance with claim 1 , wherein the cured formulation provides a coefficient of thermal expansion of below about 50 ppm/° C.
24 . The curable epoxy formulation in accordance with claim 1 , further comprising at least one filler, at least one adhesion promoter, at least one flame retardant, or combination thereof.
25 . A curable epoxy formulation comprising at least one epoxy monomer, phenyltrimethoxysilane functionalized colloidal silica having a particle size in a range between about 2 nanometers and about 10 nanometers,
a cure catalyst comprising a salt of nitrogen-containing compound, and
an anhydride curing agent wherein the glass transition temperature of the epoxy formulation is greater than about 200° C.
26 . A semiconductor package comprising at least one chip, at least one substrate, and an encapsulant,
wherein the encapsulant encapsulates at least a portion of the chip on the substrate and wherein the encapsulant comprises at least one epoxy monomer, at least one organofunctionalized colloidal silica having a particle size in a range between about 2 nanometers and about 20 nanometers, and optional reagents wherein the organofunctionalized colloidal silica substantially increases the glass transition temperature of the epoxy formulation.
27 . The semiconductor package in accordance with claim 26 , wherein the organofunctionalized colloidal silica has a particle size in a range between about 2 nanometers and about 10 nanometers.
28 . The semiconductor package in accordance with claim 26 , wherein the encapsulant has a glass transition temperature greater than about 200° C.
29 . The semiconductor package in accordance with claim 28 , wherein the encapsulant has a glass transition temperature greater than about 220° C.
30 . The semiconductor package in accordance with claim 26 , wherein the organofunctional colloidal silica comprises up to about 80 weight % of silicon dioxide, based on the total weight of the total curable epoxy formulation.
31 . The semiconductor package in accordance with claim 26 , wherein the colloidal silica is functionalized with an organoalkoxysilane.
32 . The semiconductor package in accordance with claim 31 , wherein the organoalkoxysilane comprises phenyltrimethoxysilane.
33 . The semiconductor package in accordance with claim 31 , wherein the colloidal silica is further functionalized with at least one capping agent.
34 . The semiconductor package in accordance with claim 33 , wherein the capping agent comprises a silylating agent.
35 . The semiconductor package in accordance with claim 26 , wherein the encapsulant further comprises at least one organic diluant.
36 . The semiconductor package in accordance with claim 35 , wherein the organic diluant comprises 3-ethyl-3-hydroxymethyl-oxetane.
37 . The semiconductor package in accordance with claim 26 , wherein the epoxy monomer comprises a cycloaliphatic epoxy monomer, an aliphatic epoxy monomer, an aromatic epoxy monomer, a silicone epoxy monomer, or combinations thereof.
38 . The semiconductor package in accordance with claim 26 , wherein the optional reagent comprises an alkyl onium cure catalyst.
39 . The semiconductor package in accordance with claim 38 , wherein the cure catalyst comprises bisaryliodonium hexafluoroantimonate.
40 . The semiconductor package in accordance with claim 38 , wherein the optional reagent further comprises an effective amount of a free radical generating compound.
41 . The semiconductor package in accordance with claim 26 , wherein the optional reagent comprises at least one epoxy hardener.
42 . The semiconductor package in accordance with claim 41 , wherein the epoxy hardener comprises an anhydride curing agent, a phenolic resin, an amine epoxy hardener, or combinations thereof.
43 . The semiconductor package in accordance with claim 42 , wherein the epoxy hardener comprises an anhydride curing agent.
44 . The semiconductor package in accordance with claim 43 , wherein the anhydride curing agent comprises methylhexahydrophthalic anhydride.
45 . The semiconductor package in accordance with claim 41 , wherein the optional reagent further comprises a cure catalyst comprising amines, phosphines, metal salts, salts of a nitrogen-containing compound, or combinations thereof.
46 . The semiconductor package in accordance with claim 45 , wherein the cure catalyst comprises salts of a nitrogen-containing compound.
47 . The semiconductor package in accordance with claim 26 , wherein the cured encapsulant provides a coefficient of thermal expansion of below about 50 ppm/° C.
48 . The semiconductor package in accordance with claim 26 , wherein the encapsulant further comprises at least one filler, at least one adhesion promoter, at least one flame retardant, or combination thereof.
49 . The semiconductor package in accordance with claim 26 , wherein the encapsulant is dispensed via an underfill method.
50 . The semiconductor package in accordance with claim 49 , wherein the underfill method comprises no-flow underfill, transfer molded underfill, or wafer level underfill.
51 . A semiconductor package comprising a chip, a substrate, and an encapsulant, wherein the encapsulant encapsulates at least a portion of a chip on a substrate and wherein the encapsulant comprise at least one epoxy monomer, phenyltrimethoxysilane functionalized colloidal silica having a particle size in a range between about 2 nanometers and about 10 nanometers, a cure catalyst comprising salt of nitrogen-containing compound, and anhydride curing agent wherein the glass transition temperature of the epoxy formulation is greater than about 200°C.