Optical transmission and/or receiving device
An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an electrically conducting carrier substrate with a first surface and a second surface. The semiconductor component is configured on the first surface of the carrier substrate. The second surface of the carrier substrate has a metallization that can be connected to a reference voltage applied by an electrical path through the carrier substrate to a first contacting region of the first surface of the carrier substrate. The first contact of the semiconductor component is electrically connected to the first contacting region.
1. An optical transmitting and/or receiving device, comprising:
a semiconductor component including a first contact for obtaining a reference voltage and a second contact for obtaining or providing a high-frequency electrical signal;
an electrically conducting carrier substrate having a first surface and a second surface;
said semiconductor component configured on said first surface of said carrier substrate;
said second surface of said carrier substrate having a metallization for obtaining said reference voltage;
said first surface of said carrier substrate having a first contacting region;
said carrier substrate having an electrical path for conducting said reference voltage through said carrier substrate to said first contacting region of said first surface of said carrier substrate;
said first contact of said semiconductor component being electrically connected to said first contacting region of said first surface of said carrier substrate;
wherein said carrier substrate includes a highly conducting, highly-doped semiconductor substrate and an adjoining high-impedance, low-doped epitaxial layer;
said second surface of said carrier substrate facing away from said epitaxial layer;
said epitaxial layer having a surface facing away from said semiconductor substrate;
said surface of said epitaxial layer facing away from said semiconductor substrate forming said first surface of said carrier substrate;
said electrical path through said carrier substrate having an electrically highly conducting connecting region extending through said epitaxial layer; and
said electrically conducting connecting region connected to said first contacting region.
2. The transmitting and/or receiving device according to claim 1 , wherein:
said highly conducting connecting region is formed by a local region of said epitaxial layer having foreign atoms diffused therein.
3. The transmitting and/or receiving device according to claim 1 , wherein:
said semiconductor substrate has a resistance of between 0.05 ohm-cm and 0.2 ohm-cm.
4. The transmitting and/or receiving device according to claim 1 , wherein:
said semiconductor substrate is made of high-doped silicon.
5. The transmitting and/or receiving device according to claim 1 , wherein:
said epitaxial layer has a resistance of greater than 20 ohm-cm.
6. The transmitting and/or receiving device according to claim 1 , wherein:
said epitaxial layer consists of low-doped silicon.
7. The transmitting and/or receiving device according to claim 1 , further comprising:
a bonding wire for obtaining or leading away said high-frequency signal;
said first surface of said carrier substrate having a second contacting region connected to said bonding wire for obtaining or leading away said high-frequency signal.
8. The transmitting and/or receiving device according to claim 7 , further compromising:
a matching resistor electrically connecting said second contact of said semiconductor component to said second contacting region;
said semiconductor component being a semiconductor laser.
9. The transmitting and/or receiving device according to claim 8 , wherein:
said carrier substrate includes a highly conducting, highly-doped semiconductor substrate and an adjoining high-impedance, low-doped epitaxial layer;
said second surface of said carrier substrate facing away from said epitaxial layer;
said epitaxial layer having a surface facing away from said semiconductor substrate;
said surface of said epitaxial layer facing away from said semiconductor substrate forming said first surface of said carrier substrate;
said electrical path through said carrier substrate having an electrically highly conducting connecting region extending through said epitaxial layer;
said electrically conducting connecting region connected to said first contacting region; and
said matching resistor is monolithically integrated into said epitaxial layer.
10. The transmitting and/or receiving device according to claim 9 , wherein:
said matching resistor is diffused into said epitaxial layer.
11. The transmitting and/or receiving device according to claim 8 , wherein:
said matching resistor is a polysilicon resistor.
12. The transmitting and/or receiving device according to claim 8 , wherein:
said matching resistor has a negative temperature coefficient.
13. The transmitting and/or receiving device according to claim 1 , further compromising:
a third contacting region configured on said first surface of said carrier substrate;
said third contacting region connected to said second contact of said semiconductor component; and
said third contacting region for feeding a bias current to said semiconductor component.
14. The transmitting and/or receiving device according to claim 13 , further compromising:
a bonding wire for obtaining or leading away said high-frequency signal, said first surface of said carrier substrate having a second contacting region connected to said bonding wire for obtaining or leading away said high-frequency signal; and
a matching resistor electrically connecting said second contact of said semiconductor component to said second contacting region; and
a connection between said third contacting region and said second contact of said semiconductor component, said connection running parallel to said matching resistor.
15. The transmitting and/or receiving device according to claim 13 , further compromising:
an inductance for feeding said bias current to said third contacting region.
16. The transmitting and/or receiving device according to claim 1 , further compromising:
a short-circuiting element connecting said first contact of said semiconductor component to said first contacting region;
said short-circuiting element being attached after a burn-in during production of the transmitting and/or receiving device on a wafer.
17. The transmitting and/or receiving device according to claim 1 , wherein:
said carrier substrate has a fourth contacting region connected to said first contact of said semiconductor component or to said second contact of said semiconductor component.
18. The transmitting and/or receiving device according to claim 17 , further compromising:
a short-circuiting element connecting said first contact of said semiconductor component to said first contacting region;
said short-circuiting element being attached after a burn-in during production of the transmitting and/or receiving device on a wafer;
said short-circuiting element configured between said fourth contacting region and said first contacting region; and
said short-circuiting element electrically connecting said fourth contacting region and said first contacting region.
19. The transmitting and/or receiving device according to claim 1 , further compromising:
a fifth contacting region configured on said first surface of said carrier substrate;
said first contact of said semiconductor component or said second contact of said semiconductor component configured on and electrically connected to said fifth contacting region on said first surface of said carrier substrate.
20. The transmitting and/or receiving device according to claim 19 , further compromising:
a bonding wire for obtaining or leading away said high-frequency signal, said first surface of said carrier substrate having a second contacting region connected to said bonding wire for obtaining or leading away said high-frequency signal; and
a matching resistor electrically connecting said second contact of said semiconductor component to said second contacting region;
said matching resistor electrically connecting said second contacting region to said fifth contacting region; and
said semiconductor component being a semiconductor laser.
21. The transmitting andlor receiving device according to claim 19 , further compromising:
a third contacting region configured on said first surface of said carrier substrate;
said third contacting region connected to said second contact of said semiconductor component;
said third contacting region for feeding a bias current to said semiconductor component;
said third contacting region connected to said fifth contacting region.
22. The transmitting and/or receiving device according to claim 1 , further compromising:
a monitor diode;
said carrier substrate having a sixth contacting region; and
said monitor diode configured on said sixth contacting region of said carrier substrate.
23. The transmitting and/or receiving device according to claim 1 , further compromising:
a package having a base plate;
said metallization of said carrier substrate configured on said base plate of said package; and
said base plate connected to said reference voltage.
24. The transmitting and/or receiving device according to claim 23 , wherein:
said package is a TO package having a plurality of contact pins led through said base plate.
25. The transmitting and/or receiving device according to claim 24 , wherein:
said base plate is made of metal.
26. The transmitting and/or receiving device according to claim 24 , wherein:
said plurality of contact pins includes a first contact pin for providing said high-frequency electrical signal and a second contact pin for providing a bias current.
27. The transmitting and/or receiving device according to claim 26 , further compromising:
a bonding wire for obtaining or leading away said high-frequency signal, said first surface of said carrier substrate having a second contacting region connected to said bonding wire for obtaining or leading away said high-frequency signal;
said bonding wire connecting said first contact pin to said second contacting region of said carrier substrate.
28. The transmitting and/or receiving device according to claim 26 , further compromising:
a third contacting region configured on said first surface of said carrier substrate, said third contacting region connected to said second contact of said semiconductor component, said third contacting region for feeding a bias current to said semiconductor component;
an inductance for feeding said bias current to said third contacting region;
a bonding wire connecting said second contact pin to said inductance; and
a bonding wire connecting said inductance to said third contacting region of said carrier substrate.
29. The transmitting and/or receiving device according to claim 26 , further compromising:
a third contacting region configured on said first surface of said carrier substrate, said third contacting region connected to said second contact of said semiconductor component, said third contacting region for feeding a bias current to said semiconductor component; and
an inductance for feeding said bias current to said third contacting region;
said plurality of contact pins including a third contact pin for providing a low-frequency signal terminal.
30. The transmitting and/or receiving device according to claim 29 , further compromising:
a monitor diode connected to said third contact pin.
31. The transmitting and/or receiving device according to claim 26 , further compromising:
a thermistor mechanically connected to said base plate;
said plurality of contact pins including a fourth contact pin for obtaining a measuring signal from said thermistor.
32. The transmitting and/or receiving device according to claim 1 , wherein:
said reference voltage is equal to an operating voltage (Vcc) supplying said semiconductor component.
33. The transmitting and/or receiving device according to claim 1 , wherein:
said semiconductor component is a semiconductor laser chip.
34. The transmitting and/or receiving device according to claim 1 , wherein:
said semiconductor component is a photodiode chip.