Electroluminescent device with barrier layer structure, method for manufacturing the same, and electronic apparatus
View Patent ↗The invention provides a low-profile electroluminescent (EL) device, a method for manufacturing the same, and a low-profile electronic apparatus. The EL device can include first electrodes, EL layers disposed on the first electrodes, a second electrode to cover the EL layers, and a barrier layer in contact with the second electrode. At least the surface of the second electrode facing the barrier layer can be composed of an inorganic oxide. At least the surface of the barrier layer facing the second electrode can be composed of an inorganic compound.
1. An electroluminescent device, comprising:
first electrodes;
electroluminescent layers disposed over the first electrodes;
a second electrode disposed over the electroluminescent layers and having a first surface that includes an inorganic oxide; and
a barrier layer having a second surface that includes an inorganic compound, the second surface of the barrier layer being in direct contact with the first surface of the second electrode.
2. The electroluminescent device according to claim 1 , the second electrode including indium tin oxide or indium zinc oxide.
3. The electroluminescent device according to claim 1 , the second electrode covering side faces and upper faces of the electroluminescent layers.
4. The electroluminescent device according to claim 1 , the barrier layer including at least one sublayer composed of a silicon compound.
5. The electroluminescent device according to claim 4 , the barrier layer including a sublayer in contact with the second electrode, the sublayer being composed of silicon oxide.
6. The electroluminescent device according to claim 4 , the barrier layer including a sublayer in contact with the second electrode, the sublayer being composed of silicon nitride.
7. The electroluminescent device according to claim 4 , the barrier layer including a sublayer in contact with the second electrode, the sublayer being composed of silicon nitride oxide.
8. The electroluminescent device according to claim 1 , further comprising:
an insulating layer disposed around the second electrode, the insulating layer being composed of a silicon compound,
the barrier layer extending to the insulating layer.
9. The electroluminescent device according to claim 1 , further comprising:
a protective layer that covers the barrier layer.
10. The electroluminescent device according to claim 9 , further comprising:
an adhesive layer disposed between the barrier layer and the protective layer.
11. The electroluminescent device according to claim 10 , the adhesive layer including a material that is softer than that of the protective layer.
12. An electronic apparatus comprising the electroluminescent device according to claim 1 .
13. An electroluminescent device comprising:
first electrodes;
electroluminescent layers being disposed over the first electrodes;
a second electrode being disposed over the electroluminescent layers and including an inorganic oxide; and
a barrier layer including an inorganic compound,
the inorganic oxide of the second electrode directly contacting the inorganic compound of the barrier layer.
14. An electroluminescent device comprising:
first electrodes;
electroluminescent layers disposed over the first electrodes;
a second electrode being disposed over the electroluminescent layers and including an inorganic oxide; and
a barrier layer being disposed on the second electrode and including silicon compound,
the inorganic oxide of the second electrode directly contacting the silicon compound of the barrier layer.
15. An electroluminescent device comprising:
anodes;
electroluminescent layers disposed over the anodes;
a cathode being disposed over the electroluminescent layers and including an inorganic conductive oxide; and
a barrier layer including an inorganic compound,
the inorganic conductive oxide of the cathode directly contacting the inorganic compound of the barrier layer.