In-plane switching mode liquid crystal display device and method of fabricating the same
View Patent ↗An in-plane switching liquid crystal display device includes a first substrate and a second substrate, a gate line and a data line on the first substrate to define a pixel region, a floating line adjacent to a lower portion of the data line, a thin film transistor at an intersection between the gate and data lines, a passivation layer on the thin film transistor and the pixel region, a common electrode overlapping the data line, a pixel electrode separated from the common electrode at a predetermined interval, and a liquid crystal layer between the first and second substrates.
1. An in-plane switching liquid crystal display device, comprising:
a first substrate and a second substrate;
a gate line and a data line on the first substrate to define a pixel region;
a floating line including at least two conductive lines adjacent to a lower portion of the data line, wherein a part of the floating line is overlapped with the data line;
a thin film transistor at an intersection between the gate and data lines;
a passivation layer on the thin film transistor and the pixel region;
a common electrode overlapping the data line;
a pixel electrode separated from the common electrode at a predetermined interval; and
a liquid crystal layer between the first and second substrates.
2. The device according to claim 1 , wherein the thin film transistor includes:
a gate electrode on the first substrate;
a gate insulating layer on the gate electrode;
a semiconductor layer on the gate insulating layer;
an ohmic contact layer on the semiconductor layer; and
source and drain electrodes on the ohmic contact layer.
3. The device according to claim 1 , further comprising a common line positioned in parallel to the gate line.
4. The device according to claim 1 , wherein the common electrode and the pixel electrode are formed on a same plane.
5. The device according to claim 1 , wherein the common electrode and the pixel electrode are formed on the passivation layer.
6. The device according to claim 1 , wherein the common electrode and the pixel electrode include transparent materials.
7. The device according to claim 6 , wherein the transparent materials include at least one of indium tin oxide (ITO) and indium zinc oxide (IZO).
8. The device according to claim 1 , wherein the passivation layer includes at least one of benzocyclobutene (BCB) and acryl.
9. The device according to claim 1 , wherein a width of the floating line is larger than a width of the data line.
10. The device according to claim 9 , wherein a width of the common electrode is larger than the width of the floating line.
11. The device according to claim 1 , wherein the floating line and the gate line are simultaneously formed.
12. The device according to claim 1 , further comprising a black matrix and a color filter on the second substrate.
13. An in-plane switching liquid crystal display device, comprising:
a first substrate and a second substrate;
a gate line and a data line on the first substrate to define a pixel region;
a common line parallel to the gate line;
a floating line including at least two conductive lines overlapping the data line and formed on a same plane as the gate line;
a thin film transistor at an intersection between the gate and data lines;
an organic passivation layer on the thin film transistor and the pixel region;
a common electrode on the passivation layer overlapping the data line;
a pixel electrode on the passivation layer to cross the common electrode; and
a liquid crystal layer between the first and second substrates.
14. A method of fabricating an in-plane switching liquid crystal display device, comprising:
providing first and second substrates having pixel regions;
forming a gate line and a floating line including at least two conductive lines on the first substrate;
forming a data line to overlap the floating line;
forming a thin film transistor at an intersection of the gate and data lines;
forming a passivation layer on the thin film transistor and the pixel regions;
forming a common electrode to overlap the data line and a pixel electrode on the passivation layer; and
forming a liquid crystal layer between the first and second substrates.
15. The method according to claim 14 , wherein the forming of the thin film transistor includes:
forming a gate electrode on the first substrate;
forming a gate insulating layer on the gate electrode;
forming an active layer on the gate insulating layer;
forming an ohmic contact layer on the active layer to expose a center portion of the active layer; and
forming source and drain electrodes on the ohmic contact layer.
16. The method according to claim 14 , further comprising forming a black matrix and a color filter on the second substrate.
17. The method according to claim 14 , wherein a width of the floating line is larger than a width of the data line.
18. The method according to claim 17 , wherein a width of the common electrode is larger than the width of the floating line.
19. The device according to claim 1 , wherein the common electrode laterally encircles the pixel electrode.