Band gap circuit
View Patent ↗A band gap circuit, including a differential amplifier. In response to fluctuation of the voltage on the band gap circuit output terminal VOUT, a potential difference occurs at an inverting input terminal and a noninverting input terminal of the differential amplifier. A transistor, connected to the output terminal VOUT, ground, an output terminal of the differential amplifier, causes excess current from the output terminal VOUT to flow to ground in response to fluctuation of the potential at the output terminal of the differential amplifier. A transistor that has a resistive component and a resistor that has a capacitive component are connected between a power supply voltage VDD and the output terminal VOUT.
1. A band gap circuit for generating an output voltage to be outputted from a circuit output terminal, which is connected to a power supply voltage source and a reference potential point, said band gap circuit comprising:
a differential amplifier having an inverting input terminal, a noninverting input terminal, and an output terminal;
a first circuit for causing a potential difference to occur at said inverting input terminal and said non inverting input terminal in response to fluctuation of the voltage on said circuit output terminal, said first circuit including a first element comprising an ion implantation resistor having a capacitive component;
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal and said reference potential point and being directly connected to said output terminal of said differential amplifier; and
a second element having a resistive component, wherein:
said first and second elements are connected to remove power supply noise in the power supply voltage source.
2. The band gap circuit according to claim 1 , wherein said switching element comprises a N-channel MOS transistor.
3. The band gap circuit according to claim 1 , wherein said second element comprises a transistor.
4. A band gap circuit for generating an output voltage to be outputted from a circuit output terminal, which is connected to a power supply voltage source and a reference potential point, said band gap circuit comprising:
a differential amplifier having an inverting input terminal, a noninverting input terminal, and an output terminal;
a first circuit for causing a potential difference to occur at said inverting input terminal and said noninverting input terminal in response to fluctuation of the voltage on said circuit output terminal, said first circuit including a first element comprising an ion implantation resistor having a capacitive component;
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal, said reference potential point, and said output terminal of said differential amplifier, and
a second element having a resistive component, said second element being connected to said power supply voltage source and said circuit output terminal, wherein:
said second element is connected to said first element.
5. The band gap circuit according to claim 4 , wherein said switching element comprises a N-channel MOS transistor.
6. The band gap circuit according to claim 4 , wherein said second element comprises a transistor.
7. A band gap circuit, comprising:
a voltage supply circuit adapted to be connected to a power supply voltage source;
a reference potential point,
a circuit output terminal connected to said voltage supply circuit;
a differential amplifier connected to said voltage supply circuit and having an inverting input terminal, a noninverting input terminal, and an output terminal;
a first circuit comprising an ion implantation resistor having a capacitive component, for causing a potential difference to occur at said inverting input terminal and said noninverting input terminal in response to fluctuation of the voltage on said circuit output terminal; and
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal, said reference potential point, and said output terminal of said differential amplifier, wherein:
said voltage supply circuit comprises a constant current source, a first transistor coupling said differential amplifier to the power supply voltage source and said constant current source, and a second transistor coupling said circuit output terminal to the power supply voltage source and said constant current source.
8. The band gap circuit according to claim 7 , wherein said second transistor and said ion implantation resistor are connected to remove power supply noise in the power supply voltage source.
9. The band gap circuit according to claim 7 , wherein said switching element comprises a N-channel MOS transistor.
10. A band gap circuit comprising;
a voltage supply circuit adapted to be connected to a power supply voltage source;
a reference potential point;
a circuit output terminal connected to said voltage supply circuit;
a differential amplifier connected to said voltage supply circuit and having an inverting input terminal, a noninverting input terminal, and an output terminal;
a first circuit comprising an ion implantation resistor having a capacitive component for causing a potential difference to occur at said inverting input terminal and said noninverting input terminal in response to fluctuation of the voltage on said circuit output terminal; and
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal, said reference potential point, and said output terminal of said differential amplifier, wherein:
said voltage supply circuit comprises a constant current source, a first pair of cascaded transistors coupling said differential amplifier to the power supply voltage source and said constant current source, and a second pair of cascaded transistors coupling said circuit output terminal to the power supply voltage source and said constant current source.
11. The band gap circuit according to claim 10 , wherein said second pair of cascaded transistors and said ion implantation resistor are connected to remove power supply noise in the power supply voltage source.
12. The band gap circuit according to claim 10 , wherein said switching element comprises a N-channel MOS transistor.
13. A band gap circuit, comprising:
a voltage supply circuit adapted to be connected to a power supply voltage source;
a reference potential point;
a circuit output terminal connected to said voltage supply circuit;
a differential amplifier connected to said voltage supply circuit and having an inverting input terminal, a noninverting input terminal, and an output terminal;
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal, said reference potential point, and said output terminal of said differential amplifier; and
an ion implantation resistor having a capacitive component, and connected to said circuit output terminal, wherein;
said voltage supply circuit comprises a constant current source, a first transistor coupling said differential amplifier to the power supply voltage source and said constant current source, and a second transistor having a resistive component and coupling said circuit output terminal to the power supply voltage source and said constant current source.
14. The band gap circuit according to claim 13 , wherein said switching element comprises a N-channel MOS transistor.
15. A band gap circuit comprising:
a voltage supply circuit adapted to be connected to a power supply voltage source;
a reference potential point;
a circuit output terminal connected to said voltage supply circuit;
a differential amplifier connected to said voltage supply circuit and having an inverting input terminal, a noninverting input terminal, and an output terminal;
a switching element for causing excess current from said circuit output terminal to flow to said reference potential point in response to fluctuation of potential at said output terminal of said differential amplifier, said switching element being connected to said circuit output terminal, said reference potential point and said output terminal of said differential, amplifier; and
an ion implantation resistor having a capacitive component and being connected to said circuit output terminal, wherein:
said voltage supply circuit comprises a constant current source, a first pair of cascaded transistors coupling said differential amplifier to the power supply voltage source and said constant current source, and a second pair of cascaded transistors coupling said circuit output terminal to the power supply voltage source and said constant current source.
16. The band gap circuit according to claim 15 , wherein said switching element comprises a N-channel MOS transistor.