Overcurrent protection and masking circuitry for protection against an overcurrent condition
An overcurrent protection circuit ( 6 ) outputs an overcurrent protection signal (S 6 ) based on a sense voltage (V sense ). A masking circuit ( 5 ) is configured so as to allow a masking signal (S 5 ) to be kept set to “L” even when an input signal (IN) rises to “H” (an IGBT ( 1 ) is turned on) and an NPN bipolar transistor ( 23 ) is turned off, and allow the masking signal (S 5 ) to be changed only after a capacitor (C 12 ) is charged up and a voltage (V9) exceeds a reference voltage (VR). An AND gate ( 25 ) receives the masking signal (S 5 ) at one of input terminals thereof and the overcurrent protection signal (S 6 ) at the other of the input terminals thereof, and provides an output which is then output as an interruption control signal (SC_OUT) from a sense output terminal (P 2 ) and is finally supplied to a gate terminal (P 3 ) of the IGBT ( 1 ).
1. A driving circuit which drives a semiconductor device based on a control signal supplied to a gate terminal, said driving circuit comprising:
an overcurrent protection circuit configured to detect an overcurrent condition of said semiconductor device based on a sense voltage obtained from a sense electrode, and outputting an overcurrent protection signal to said gate terminal to instruct said semiconductor device to stop operating when an overcurrent condition is detected;
an overcurrent protection signal masking part configured to output a masking signal invalidating said overcurrent protection signal during a masking period after a turn on and a turn off of said semiconductor device, and validating said overcurrent protection signal during periods other than said masking period; and
a control element configured to receive said masking signal and said overcurrent protection signal and configured to output said control signal.
2. The driving circuit according to claim 1 , further comprising
a short-circuit protection circuit for detecting occurrence or non-occurrence of a short-circuit condition of said semiconductor device based on said sense voltage, and supplying a short-circuit protection signal which instructs said semiconductor device to stop operating when a short-circuit condition is detected, to said gate terminal of said semiconductor device.
3. The driving circuit according to claim 2 , wherein
said overcurrent protection circuit detects that said semiconductor device is under an overcurrent condition when said sense voltage is higher than a first detection threshold voltage,
said short-circuit protection circuit detects that said semiconductor device is under a short-circuit condition when said sense voltage is higher than a second detection threshold voltage, and
said second detection threshold voltage is determined to be higher than said first detection threshold voltage.
4. The driving circuit according to claim 1 , wherein
said overcurrent protection signal masking part receives a drive-related signal which is synchronized with a signal controlling said semiconductor device so as to be turned on or off, to establish said masking period in response to said drive-related signal.
5. The driving circuit according to claim 1 ,
wherein said semiconductor device includes an IGBT.
6. A driving circuit which drives a semiconductor device based on a control signal supplied to a gate terminal, said driving circuit comprising:
an overcurrent protection circuit configured to detect an overcurrent condition of said semiconductor device based on a sense voltage obtained from a sense electrode, and outputting an overcurrent protection signal to said gate terminal to instruct said semiconductor device to stop operating when an overcurrent condition is detected;
means for outputting a masking signal invalidating said overcurrent protection signal during a masking period after a turn on and a turn off of said semiconductor device, and validating said overcurrent protection signal during periods other than said masking period; and
means for receiving said masking signal and said overcurrent protection signal and for outputting said control signal.
7. A driving circuit which drives a semiconductor device based on a control signal supplied to a gate terminal, said driving circuit comprising:
an overcurrent protection circuit configured to detect an overcurrent condition of said semiconductor device based on a sense voltage obtained from a sense electrode, and outputting an overcurrent protection signal to said gate terminal to instruct said semiconductor device to stop operating when an overcurrent condition is detected;
an overcurrent protection signal masking part configured to output a masking signal invalidating said overcurrent protection signal during a masking period after a turn on and a turn off of said semiconductor device, and validating said overcurrent protection signal during periods other than said masking period; and
means for receiving said masking signal and said overcurrent protection signal and for outputting said control signal.