Method for eliminating process byproduct during fabrication of liquid crystal display

1. A fabricating method of a liquid crystal display, comprising the steps of:

inserting a first substrate into a chamber to perform a dry etching process;

removing the first substrate from the chamber after completion of the dry etching process;

inserting a dummy substrate into the chamber;

injecting inert gas into the chamber containing the dummy substrate to eliminate a process byproduct and a remaining gas from the chamber;

taking the dummy substrate out from the chamber; and

inserting a second substrate into the chamber having the process byproduct and the remaining gas removed, to perform an ashing process.

2. The fabricating method according to claim 1 , wherein the step of performing the dry etching process includes:

dry-etching a gate metal layer that is deposited on the first substrate.

3. The fabricating method according to claim 1 , wherein the step of performing the dry etching process includes:

dry-etching a protective film that is deposited on the first substrate.

4. The fabricating method according to claim 1 , wherein the inert gas includes at least helium gas (He).

5. The fabricating method according to claim 1 , wherein the step of performing the ashing process includes:

making a photo resist pattern thinner, wherein the photo resist pattern is formed on the second substrate.

6. The fabricating method according to claim 5 , wherein the photo resist pattern overlaps a channel part of a thin film transistor formed on the second substrate.

7. The fabricating method according to claim 1 , wherein the step of performing the ashing process is performed using an ashing gas injected into the chamber, the ashing gas includes SF 6 gas and O 2 gas.

8. The fabricating method according to claim 7 , wherein a SF 6 gas to O 2 gas ratio is 1:20.

9. A fabricating method of a liquid crystal display, comprising the steps of:

inserting a first substrate into a chamber;

performing a dry etching process with a process gas on the first substrate that results in a process byproduct and a remaining process gas in the chamber;

removing the first substrate from the chamber after completion of the dry etching process;

inserting a dummy substrate into the chamber;

flowing inert gas through the chamber containing the dummy substrate to remove remaining process gas from the chamber;

removing the dummy substrate from the chamber; and

inserting a second substrate into the chamber;

performing an ashing process on the second substrate.

10. The fabricating method according to claim 9 , wherein the step of performing the dry etching process includes:

dry-etching a gate metal layer that is deposited on the first substrate.

11. The fabricating method according to claim 9 , wherein the step of performing the dry etching process includes:

dry-etching a protective film that is deposited on the first substrate.

12. The fabricating method according to claim 9 , wherein the inert gas includes at least helium gas.

13. The fabricating method according to claim 9 , wherein the step of performing the ashing process includes:

making a photo resist pattern thinner, wherein the photo resist pattern is formed on the second substrate.

14. The fabricating method according to claim 9 , wherein the first substrate and second substrate are the same substrate.

15. The fabricating method according to claim 9 , wherein a SF 6 gas to O 2 gas ratio is 1:20.

16. A fabricating method of a liquid crystal display, comprising the steps of:

inserting a first substrate into a chamber;

performing a first process on the first substrate;

removing the first substrate from the chamber after completion of the first process;

inserting a dummy substrate into the chamber;

applying RF power to the dummy substrate in the chamber:

cooling the chamber containing the dummy substrate with an inert gas;

removing the dummy substrate from the chamber; and

inserting a second substrate into the chamber;

performing an ashing process on the second substrate.

17. The fabricating method according to claim 16 , wherein the inert gas includes at least helium gas.

18. The fabricating method according to claim 16 , wherein the step of performing the ashing process includes:

making a photo resist pattern thinner, wherein the photo resist pattern is formed on the second substrate.

19. The fabricating method according to claim 16 , wherein the first substrate and second substrate are the same substrate.

20. The fabricating method according to claim 16 , wherein a SF 6 gas to O 2 gas ratio is 1:20.