Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same
View Patent ↗A crystallization method of an amorphous semiconductor layer includes providing an amorphous semiconductor layer having a first thickness, crystallizing the amorphous semiconductor layer in a first direction, partially reducing the crystallized semiconductor layer to a second thickness less than the first thickness and crystallizing the etched semiconductor layer in a second direction.
1. A crystallization method of an amorphous semiconductor layer comprising:
providing an amorphous semiconductor layer having a first thickness;
crystallizing the amorphous semiconductor layer in a first direction;
partially etching the crystallized semiconductor layer to a second thickness less than the first thickness; and
crystallizing the partially etched semiconductor layer in a second direction, wherein the crystallizing is performed by sequential lateral solidification.
2. The method according to claim 1 , wherein the first thickness is approximately 1000˜2000 Å.
3. The method according to claim 1 , wherein the second thickness is approximately 300˜600 Å.
4. The method according to claim 1 , wherein the first direction and the second direction are perpendicular to each other.
5. The method according to claim 1 , wherein the amorphous semiconductor layer is formed over a substrate.
6. The method according to claim 5 , further comprising forming a buffer layer on the substrate.