Compound electrodes for electronic devices

1. An electronic device comprising:

(a) a first electrode;

(b) a second electrode that comprises:

(1) a first layer comprising at least a halide compound of at least a metal selected from the group consisting of sodium and potassium; and

(2) a second layer comprising an electrically conducting material; and

(c) at least an electronically active material disposed between the first electrode and the second electrode;

wherein the second layer is disposed between the first layer and the electronically active material of the electronic device.

2. The electronic device according to claim 1 , wherein the first layer of the second electrode comprises at least a fluoride compound.

3. The electronic device according to claim 1 , wherein the first layer of the second electrode has a thickness in a range from about 1 nm to about 100 nm.

4. The electronic device according to claim 1 , wherein the second layer of the second electrode comprises a material selected from the group consisting of aluminum, silver, gold, tin, calcium, magnesium, yttrium, scandium, elements of lanthanide series, mixtures thereof, and alloys thereof.

5. The electronic device according to claim 1 , wherein the second layer of the second electrode comprises aluminum.

6. The electronic device according to claim 5 , wherein the second layer of the second electrode has a thickness in a range from about 1 nm to about 40 nm.

7. The electronic device according to claim 1 , wherein the first electrode comprises a metal oxide selected from the group consisting of indium tin oxide (“ITO”), tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc indium tin oxide, antimony oxide, and mixtures thereof.

8. The electronic device according to claim 1 , wherein the first electrode comprises at least a metal selected from the group consisting of silver, copper, tungsten, nickel, cobalt, iron, selenium, germanium, gold, platinum, and aluminum.

9. The electronic device according to claim 1 , wherein the electronic device is an organic light-emitting device, and the opto-electronically active material is selected from the group consisting of poly(N-vinylcarbazole) (“PVK”);

poly(alkylfluorene), poly(praraphenylene), polysilanes, 1,3,5-tris {n-(4-diphenylaminophenyl) phenylamino}benzene, phenylanthracene, tetraarylethene, coumarin, rubrene, tetraphenylbutadiene, anthracene, perylene, coronene, and derivatives thereof.

10. The electronic device according to claim 1 , wherein the electronic device is an organic light-emitting device, and the electronically active material is an opto-electronically active material and is selected from the group consisting of aluminum-acetylacetonate, gallium- acetylacetonate, indium-acetylacetonate, aluminum-(picolymethylketone) -bis {2,6-di(t-butyl)phenoxide}, and scandium-(4-methoxy-picolylmethylketone) -bis(acetylacetonate).

11. The electronic device according to claim 1 , wherein the electronic device is an organic light-emitting device, and the electronically active material is an opto-electronically active material and is selected from the group consisting of tris (8-quinolinolato) aluminum and derivatives thereof.

12. The electronic device according to claim 1 , further comprising an additional layer that comprises a substantially transparent, electrically conducting material disposed on the first layer of the second electrode.

13. The electronic device according to claim 12 , wherein the second layer of the second electrode comprises aluminum and has a thickness in the range from about 1 nm to about 40 nm, and the additional layer comprises a metal oxide selected from the group consisting of ITO, tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc indium tin oxide, antimony oxide, and mixtures thereof.

14. The electronic device according to claim 13 , wherein the first electrode comprises a metal oxide selected from the group consisting of ITO, tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc indium tin oxide, antimony oxide, and mixtures thereof.

15. The electronic device according to claim 14 , wherein the electronic device is a photovoltaic (“PV”) cell, and the electronically active material is a PV material.

16. An light-emitting device comprising:

(a) a first electrode;

(b) a second electrode that comprises:

(1) a first layer comprising at least a fluoride compound of at least a metal selected from the group consisting of sodium and potassium, the first layer having a thickness in a range from about 1 nm to about 100 nm; and

(2) a second layer comprising aluminum and having a thickness in a range from about 1 nm to about 40 nm; and

(c) an organic light-emitting material disposed between the first electrode and the second electrode, the organic light-emitting material comprising a polyfluorene;

wherein the second layer is disposed between the first layer and the organic light-emitting material of the electronic device.

17. A compound electrode comprising:

(a) a first layer comprising at least a halide compound of at least a metal selected from the group consisting of sodium and potassium; and

(b) a second layer comprising an electrically conducting material; wherein the second layer is in contact with an electronically active material.

18. The compound electrode according to claim 17 , wherein the first layer of the compound electrode comprises at least a fluoride compound.

19. The compound electrode according to claim 17 , wherein the first layer of the compound electrode has a thickness in a range from about 1 nm to about 100 nm.

20. The compound electrode according to claim 17 , wherein the second layer of the compound electrode comprises a metal selected from the group consisting of aluminum, silver, gold, tin, calcium, magnesium, yttrium, scandium, elements of lanthanide series, mixtures thereof, and alloys thereof.

21. The compound electrode according to claim 17 , wherein the second layer of the compound electrode comprises aluminum.

22. The compound electrode according to claim 21 , wherein the second layer of the compound electrode comprises aluminum and has a thickness in a range from about 1 nm to about 40 nm.