High repetition rate passively Q-switched laser for blue laser based on interactions in fiber
View Patent ↗A laser apparatus is disclosed. The apparatus includes a Neodymium-doped lasing material having first and second surfaces and a passive Q-switch optically coupled to the second surface. The first-surface is substantially transparent to a pump radiation and substantially reflective to laser radiation generated by an interaction between the pump radiation and the Neodymium-doped lasing material. The laser radiation is characterized by a vacuum wavelength corresponding to an atomic transition from the 4 F 3/2 level to the 4 I 9/2 level of Neodymium in the lasing material. The second surface transmits at least a portion of the laser radiation. The lasing material and Q-switch are configured to produce pulses of the laser radiation characterized by a pulse length of greater than zero and less than about 1.5 nanoseconds and a pulse repetition rate greater than about 100 kHz. A PQSL laser, an apparatus for generating blue light and a display system based on the laser apparatus are also disclosed.
1. A laser apparatus comprising:
a Neodymium-doped lasing material,
wherein the lasing material includes a first-surface that is substantially transparent to a pump radiation and substantially reflective to a laser radiation generated by an interaction between the pump radiation and the Neodymium-doped lasing material, and a second surface that transmits at least a portion of the laser radiation; and
wherein the laser radiation is characterized by a vacuum wavelength corresponding to an atomic transition from the 4 F 3/2 level to the 4 I 9/2 level of Neodymium in the lasing material;
a passive Q-switch optically coupled to the second surface of the lasing material;
wherein the lasing material and the Q-switch are configured to produce pulses of the laser radiation;
wherein the lasing material is Nd:YVO 4 ;
wherein the pulses are characterized by a pulse length of greater than zero and less than about 1.5 nanoseconds and a pulse repetition rate greater than about 100 kHz; and
wherein the Neodymium concentration in the lasing material is greater than about 1% and less than about 3%.
2. The apparatus of claim 1 wherein the Neodymium concentration in the lasing material is about 2%.
3. The apparatus of claim 1 wherein the lasing material is between about 50 microns thick and about 100 microns thick.
4. The apparatus of claim 1 wherein the first surface of the lasing material is configured to transmit between about 0.5% and about 2% of the laser radiation incident upon it from within the lasing material.
5. The apparatus of claim 4 wherein the first surface of the lasing material is configured to transmit about 1% of the laser radiation incident upon it from within the lasing material.
6. The apparatus of claim 5 wherein the first surface is configured to transmit about 0.94% of laser radiation of the ordinary polarization and about 0.98% of laser radiation of the extraordinary polarization.
7. A laser apparatus comprising:
a Neodymium-doped lasing material, wherein the lasing material includes a first-surface that is substantially transparent to a pump radiation and substantially reflective to laser radiation generated by an interaction between the pump radiation and the Neodymium-doped lasing material, wherein the laser radiation is characterized by a vacuum wavelength corresponding to an atomic transition from the 4 F 3/2 level to the 4 I 9/2 level of Neodymium in the lasing material, the lasing material further having a second surface that transmits at least a portion of the laser radiation; and
a passive Q-switch optically coupled to the second surface of the lasing material; and
wherein the lasing material and the Q-switch are configured to produce pulses of the laser radiation;
wherein the pulses are characterized by a pulse length of greater than zero and less than about 1.5 nanoseconds and a pulse repetition rate greater than about 100 kHz;
wherein the Q-switch includes a saturable Bragg reflector (SBR);
wherein the SBR includes a substrate, semiconductor mirror stack having alternating high and low refractive index layers, a quantum well stack having between about 3 and about 15 quantum wells, and a dielectric overcoat;
wherein the semiconductor mirror stack is disposed between the substrate and the quantum wells;
wherein the quantum well stack is disposed between the semiconductor mirror stack and the dielectric overcoat;
wherein the dielectric overcoat includes alternating layers of SiO 2 and HfO 2 ; and
wherein the dielectric overcoat has a reflectivity of between about 87% and about 96% at the wavelength of the laser radiation from the Neodymium-doped lasing material.
8. The apparatus of claim 7 wherein the dielectric overcoat has a reflectivity of greater than about 90% at the wavelength of the pump radiation.
9. A passively Q-switched laser (PQSL), comprising:
a source of pump radiation;
a Neodymium-doped lasing material, wherein the lasing material includes a first-surface that is substantially transparent to the pump radiation and substantially reflective to laser radiation characterized by an electronic transition from the 4 F 3/2 level to the 4 I 9/2 level of Neodymium in the lasing material, the lasing material further having a second surface that transmits at least a portion of the laser radiation; and
a passive Q-switch optically coupled to the second surface of the lasing material;
wherein the source of pump radiation, lasing material and Q-switch are configured to produce pulses of laser radiation characterized by a wavelength corresponding to an electronic transition from the 4 F 3/2 level to the 4 I 9/2 level;
wherein the pulses are characterized by a pulse length of greater than zero and less than about 1.5 nanoseconds and a pulse repetition rate greater than about 100 kHz;
wherein the lasing material is Nd:YVO 4 ; and
wherein the Neodymium concentration in the lasing material is greater than about 1% and less than about 3%.
10. The PQSL of claim 9 wherein the Neodymium concentration in the lasing material is about 2%.
11. The PQSL of claim 9 wherein the lasing material is between about 50 microns thick and about 100 microns thick.
12. The PQSL of claim 9 wherein the first surface of the lasing material is configured to transmit between about 0.5% and about 2% of the laser radiation incident upon it from within the lasing material.
13. The PQSL of claim 12 wherein the first surface of the lasing material is configured to transmit about 1% of the laser radiation incident upon it from within the lasing material.
14. The PQSL of claim 13 wherein the first surface is configured to transmit about 0.94% of laser radiation of the ordinary polarization and about 0.98% of laser radiation of the extraordinary polarization.
15. An apparatus for producing blue light comprising:
a neodymium-doped cladding-pumped fiber device for amplifying laser radiation;
an optical harmonic generator optically coupled to the fiber device for increasing a frequency of the laser radiation to produce a blue output radiation; and
a passively Q-switched laser (PQSL) optically coupled to the neodymium-doped cladding-pumped fiber device, wherein the PQSL is configured to produce the laser radiation, the laser radiation having a harmonic that is blue, whereby the harmonic generator interacts with the laser radiation to produce blue light,
wherein the PQSL includes:
a source of pump radiation;
a Neodymium-doped lasing material, wherein the lasing material includes a first-surface that is substantially transparent to the pump radiation and substantially reflective to laser radiation characterized by a by an electronic transition from the 4 F 3/2 level to the 4 I 9/2 level of Neodymium in the lasing material, the lasing material further having a second surface that transmits at least a portion of the laser radiation; and
a passive Q-switch optically coupled to the second surface of the lasing material;
wherein the source of pump radiation, lasing material and Q-switch are configured to produce pulses of the laser radiation characterized by a wavelength corresponding to an electronic transition from the 4 F 3/2 level to the 4 I 9/2 level;
wherein the pulses are characterized by a pulse length of greater than zero and less than about 1.5 nanoseconds and a pulse repetition rate greater than about 100 kHz;
wherein the lasing material is Nd:YVO 4 ; and
wherein the Neodymium concentration in the lasing material is greater than about 1% and less than about 3%.
16. The apparatus of claim 15 wherein the Neodymium concentration in the lasing material is about 2%.
17. The apparatus of claim 15 wherein the lasing material is between about 50 microns thick and about 100 microns thick.
18. The apparatus of claim 15 wherein the first surface of the lasing material is configured to transmit between about 0.5% and about 2% of the laser radiation incident upon it from within the lasing material.
19. The apparatus of claim 18 wherein the first surface of the lasing material is configured to transmit about 1% of the laser radiation incident upon it from within the lasing material.
20. The apparatus of claim 19 wherein the first surface is configured to transmit about 0.94% of laser radiation of the ordinary polarization and about 0.98% of laser radiation of the extraordinary polarization.