Codoped direct-gap semiconductor scintillators
View Patent ↗Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
1. An inorganic scintillator comprising: a direct-gap semiconductor and a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein one codopant is an acceptor dopant which produces holes in an acceptor band and the other dopant is a donor dopant trap which traps electrons until they recombine with holes in the acceptor band.
2. An inorganic scintillator comprising: a direct-gap semiconductor; and a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein one codopant is an acceptor dopant which produces holes in an acceptor band and the other codopant is an isoelectronic dopant trap which traps electrons until they recombine with holes in the acceptor band.
3. An inorganic scintillator comprising: a direct-gap semiconductor; and a pair of codopants in the semiconductor to provide dopant band to dopant trap radiative recombination, wherein the direct-gap semiconductor and pair of codopants comprises CdS:In,Te; CdS:In,Ag; or CdS:In,Na.
4. The scintillator of claim 1 , wherein each codopant is present at about 0.01 mole % to about 1 mole %.
5. The scintillator of claim 1 , wherein each codopant is present at about 0.1 mole % to about 0.2 mole %.
6. The scintillator of claim 1 , wherein the direct-gap semiconductor is PbI 2 , HgI 2 , CuI, or ZnTe.
7. The scintillator of claim 1 , wherein the direct-gap semiconductor is ZnTe.
8. The scintillator of claim 2 , wherein each codopant is present at about 0.01 mole % to about 1 mole %.
9. The scintillator of claim 2 , wherein each codopant is present at about 0.1 mole % to about 0.2 mole %.
10. The scintillator of claim 2 , wherein the direct-gap semiconductor is PbI 2 , HgI 2 , CuI, or ZnTe.
11. The scintillator of claim 2 , wherein the direct-gap semiconductor is ZnTe.