Micro electron gun of quantum size effect type and flat display using such electron guns as well as methods of their manufacture
View Patent ↗A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate ( 2 ) are accelerated under an electric field through a layer or layers ( 4 ) of quantum size effect micro particles ( 3 ) formed on surfaces of the n-type semiconductor substrate ( 2 ) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode ( 5 ) may possess an amount of energy not less than the work function of the electrode ( 5 ) and are thus allowed to spring out into a vacuum. Such a quantum size effect micro particle ( 3 ) comprises a micro particle of a single crystal semiconductor in a nanometer order having electron energy levels made so discrete that no phonon scattering is brought about, and on its surface area an insulator so thin that an electron is capable of tunneling therethrough.
1. A method of making quantum size effect micro particles, characterized in that it comprises the steps of:
introducing silane into a VHF-band plasma of argon while controlling the time duration in which the silane is so introduced to form Si single crystal micro particles with their particle size controlled;
forming on a substrate a layer of said Si single crystal micro particles so formed; and
converting respective surface areas of the said Si single crystal micro particles in said layer on said substrate into insulating films.
2. A method of making quantum size effect micro particles as set forth in claim 1 , characterized in that the step of forming Si single crystal micro particles comprises:
forming SiH 2 radical, SiH 3 radical and SiH n + ions (where n=0 to 3) in said VHF-band plasma of argon;
forming nuclei of said Si single crystal micro particles from the SiH 2 radical; and
bonding the SiH 3 radical and SiH n + ions (where n=0 to 3) to said nuclei to cause the latter individually to crystallographically grow, thereby forming the Si single crystal micro particles.
3. A method of making quantum size effect micro particles as set forth in claim 1 , characterized in that the step of forming a layer of Si single crystal micro particles on a substrate comprises causing the Si single crystal micro particles to diffuse following a concentration gradient thereof, followed by their arrival to and deposition on said substrate, forming there said layer thereof.
4. A method of making quantum size effect micro particles as set forth in claim 1 , characterized in that the step of converting respective surface areas of said single crystal micro particles in said layer on said substrate into insulating films comprises exposing said Si single crystal micro particles to a gas atmosphere of O 2 or N 2 to oxidize or nitrify the respective surface areas thereof.
5. A method of making quantum size effect micro particles as set forth in claim 1 , characterized in that the step of converting respective surface areas of said single crystal micro particles in said layer on said substrate into insulating films comprises exposing said Si single crystal micro particles to a gas plasma of O 2 or N 2 to oxidize or nitrify the respective surface areas thereof.
6. A method of forming layers of quantum size effect particles, characterized in that it comprises repeating a process comprising steps as set forth in claim 1 .