Pattern forming method and electric device fabricating method using the same

1. A pattern forming method comprising:

forming an etching-subject layer on a substrate;

forming a Ti layer on the etching-subject layer;

forming a TiOx layer by irradiating light on a portion of the Ti layer using a mask;

etching the Ti layer to remove remaining Ti metal portions of the Ti layer to form a TiOx pattern;

etching the etching-subject layer using the TiOx pattern as a mask; and

removing the TiOx pattern.

2. The method of claim 1 , wherein the light is an ultraviolet ray or laser.

3. The method of claim 1 , wherein the Ti layer is oxidized by the irradiation of the light to form the TiOx layer.

4. The method of claim 1 , wherein etching the Ti layer includes applying an etching solution having an acid.

5. The method of claim 4 , wherein the acid includes HF.

6. The method of claim 1 , wherein etching the Ti layer includes the applying an etching gas containing Cl 2 .

7. The method of claim 1 , wherein etching the Ti layer includes applying the etching gas includes a Cl 2 -mixed gas.

8. The method of claim 7 , wherein the Cl 2 -mixed gas includes CF 4 /Cl 2 /O 2 gas.

9. The method of claim 1 , wherein removing the TiOx pattern includes applying an etching solution having H 2 SO 4 .

10. The method of claim 1 , wherein removing the TiOx pattern includes applying an alkali based etching solution.

11. The method of claim 1 , wherein removing the TiOx pattern includes applying the etching gas including Cl 2 /N 2 gas.

12. The method of claim 1 , wherein removing the TiOx pattern includes applying the etching gas including CF 4 /Cl 2 .

13. The method of claim 1 , wherein the etching-subject layer is one of a metal layer, an insulating layer and a semiconductor layer.

14. The method of claim 1 , wherein the Ti layer is formed with the same equipment as the etching-subject layer.

15. A pattern forming method comprising:

forming an etching-subject layer on a substrate;

forming a Ti layer on the etching-subject layer;

oxidizing a portion of the Ti layer to form TiOx portions;

removing remaining Ti metal portions of the Ti layer to form a TiOx pattern;

etching the etching-subject layer using the TiOx pattern as a mask; and

removing the TiOx pattern.

16. The method of claim 15 , wherein oxidizing a portion of the Ti layer includes irradiating light onto the Ti layer using a mask.

17. The method of claim 16 , wherein the light is one of ultraviolet light and laser.

18. A pattern forming method comprising:

forming an etching-subject layer on a substrate;

forming a TiO 2 layer including a first region and a second region on the etching-subject layer;

irradiating light onto the first region of the TiO 2 layer using a mask;

etching the second region of the TiO 2 layer;

etching the etching-subject layer using the first region of the TiO 2 layer as a mask; and

removing the first region of the TiO 2 layer.

19. The method of claim 18 , wherein forming the TiO 2 layer includes depositing TiO 2 on the etching-subject layer.

20. The method of claim 18 , wherein forming the TiO 2 layer includes:

depositing Ti on the etching-subject layer to form a Ti layer; and

oxidizing the Ti layer.

21. The method of claim 20 , wherein the Ti layer is oxidized by irradiation of light.

22. The method of claim 18 , wherein the light is ultraviolet light or laser.

23. The method of claim 18 , wherein a surface of the first region of the TiO 2 layer is changed from hydrophobic to hydrophilic by the irradiation of the light.

24. The method of claim 18 , wherein etching the second region of TiO 2 layer includes applying an etching solution including H 2 SO 4 to the TiO 2 layer.

25. The method of claim 18 , wherein etching the second region of TiO 2 layer includes applying an alkali based etching solution to the TiO 2 layer.

26. The method of claim 18 , wherein removing the first region of TiO 2 layer includes applying an etching gas having Cl 2 /N 2 gas to the first region of the TiO 2 layer.

27. The method of claim 18 , wherein removing the first region of TiO 2 layer includes applying the etching gas having CF 4 /Cl 2 gas to the first region of TiO 2 layer.

28. The method of claim 18 , wherein the etching-subject layer includes one of a metal layer, an insulating layer and a semiconductor layer.

29. The method of claim 18 , wherein the TiO 2 layer is formed using the same equipment used for forming the etching-subject layer.

30. A pattern forming method comprising:

forming an etching-subject layer on a substrate;

forming a TiO x layer on the etching-subject layer;

changing a surface of the TiO x layer from hydrophobic to hydrophilic such that the TiO x layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO x layer having a hydrophobic surface to form a hydrophilic TiO x pattern;

etching the etching-subject layer using the hydrophilic TiO x pattern as a mask; and

removing the hydrophilic TiO x pattern.

31. The method of claim 30 , wherein changing a surface of the TiO x layer includes irradiating light onto the TiO x layer.

32. The method of claim 31 , wherein the light includes one of ultraviolet and laser.

33. A pattern forming method comprising:

providing an etching-subject layer;

forming a metal layer on the etching-subject layer;

oxidizing a portion of the metal layer to form a metallic oxide layer portion and non-oxidized metal layer portion;

removing the non-oxidized metal layer portion using a first etching means;

etching the etching-subject layer using the metallic oxide layer as a mask; and

etching the metallic oxide layer using a second etching means.

34. The method of claim 33 , wherein the metal layer includes a Ti.

35. The method of claim 34 , wherein the metallic oxide layer portion includes TiOx.

36. The method of claim 33 , wherein the first etching means is an etching solution having a higher etching rate on the non-oxidized metal layer portion than on the metallic oxide layer portion.

37. The method of claim 33 , wherein the first etching means is an etching gas having a higher etching rate on the non-oxidized metal layer portion than on the metallic oxide layer portion.

38. The method of claim 33 , wherein the second etching means is an etching solution having a higher etching rate on the metallic oxide layer portion than on the non-oxidized metal layer portion.

39. The method of claim 33 , wherein the second etching means is an etching gas having a higher etching rate on the metallic oxide layer portion than on the non-oxidized metal layer portion.

40. A method for fabricating a liquid crystal display device, the method comprising:

providing a substrate;

forming a gate electrode on the substrate using a first metal masking layer;

depositing a gate insulating layer over the substrate;

forming a semiconductor layer on the gate insulating layer using a second metal masking layer;

forming source/drain electrodes on the semiconductor layer using a third metal masking layer;

forming a passivation layer over the substrate; and

depositing a pixel electrode on the passivation layer.

41. The method of claim 40 , wherein the first, second and third metal masking layers are each comprised of Ti.

42. The method of claim 41 , wherein forming the gate electrode includes the steps of:

forming a metal layer on the substrate;

forming the first metal masking layer made of Ti on the metal layer;

irradiating light onto a portion of the first metal masking layer using a mask to form a TiOx masking layer portion and a Ti masking layer portion;

etching the Ti masking layer portion;

etching the metal layer using the TiOx masking layer portion as a mask; and

removing the TiOx masking layer portion.

43. The method of claim 41 , wherein forming the semiconductor layer includes:

depositing the semiconductor layer on the gate insulating layer;

forming the second metal masking layer made of Ti on the semiconductor layer;

irradiating light onto a portion of the second metal masking layer using a mask to form a TiOx masking layer portion and a Ti masking layer portion;

etching the Ti masking layer portion;

etching the semiconductor layer using the TiOx masking layer portion as a mask; and

removing the TiOx masking layer portion.

44. The method of claim 41 , wherein forming the source/drain electrode includes:

forming a metal layer on the semiconductor layer;

forming the third metal masking layer made of Ti on the metal layer;

irradiating light to a portion of the metal masking layer using a mask to form a TiOx masking layer portion and a Ti masking layer portion;

etching the Ti masking layer portion;

etching the metal layer using the TiOx masking layer portion as a mask; and

removing the TiOx masking layer portion.

45. The method of claim 40 , wherein depositing the pixel electrode includes:

forming an Indium Tin Oxide layer on the passivation layer;

forming a fourth metal masking layer made of Ti on the Indium Tin Oxide layer;

irradiating light to a portion of the metal masking layer by using a mask to form a TiOx masking layer portion and a Ti masking layer portion;

etching the Ti masking layer portion;

etching the Indium Tin Oxide layer using the TiOx masking layer portion as a mask; and

removing the TiOx masking layer portion.

46. The method of claim 40 , wherein the first, second and third metal masking layers are each comprised of TiO 2 .

47. The method of claim 46 , wherein forming the gate electrode includes:

forming a metal layer on the substrate;

forming the first metal masking layer made of TiO 2 on the metal layer;

irradiating light onto a portion of the TiO 2 layer to change a surface of the TiO 2 layer from hydrophobic to hydrophilic such that the TiO 2 layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO 2 layer having a hydrophobic surface to form a hydrophilic TiO 2 pattern;

etching the metal layer using the hydrophilic TiO 2 pattern as a mask; and

removing the hydrophilic TiO 2 pattern.

48. The method of claim 46 , wherein forming the semiconductor layer includes:

depositing the semiconductor layer on the insulating layer;

forming the metal masking layer made of TiO 2 on the semiconductor layer;

irradiating light onto a portion of the TiO 2 layer to change a surface of the TiO 2 layer from hydrophobic to hydrophilic such that the TiO 2 layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO 2 layer having a hydrophobic surface to form a hydrophilic TiO 2 pattern;

etching the semiconductor layer using the hydrophilic TiO 2 pattern as a mask; and

removing the hydrophilic TiO 2 pattern.

49. The method of claim 46 , wherein forming the source/drain electrodes includes:

forming a metal layer on the semiconductor layer;

forming the metal making layer made of TiO 2 on the metal layer;

irradiating light onto a portion of the TiO 2 layer to change a surface of the TiO 2 layer from hydrophobic to hydrophilic such that the TiO 2 layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO 2 layer having a hydrophobic surface to form a hydrophilic TiO 2 pattern;

etching the metal layer using the hydrophilic TiO 2 pattern as a mask; and

removing the hydrophilic TiO 2 pattern.

50. The method of claim 46 , wherein depositing the pixel electrode includes:

forming an indium tin oxide layer on the passivation layer;

forming the fourth metal making layer made of TiO 2 on the ITO layer;

irradiating light onto a portion of the TiO 2 layer to change a surface of the TiO 2 layer from hydrophobic to hydrophilic such that the TiO 2 layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO 2 layer having a hydrophobic surface to form a hydrophilic TiO 2 pattern;

etching the Indium Tin Oxide layer using the hydrophilic TiO 2 pattern as a mask; and

removing the hydrophilic TiO 2 pattern.

51. A method for fabricating a semiconductor device, the method comprising:

depositing an insulating layer on a semiconductor substrate;

forming a metal layer on the insulating layer;

forming a Ti layer on the metal layer;

irradiating light onto a portion of the Ti layer using a mask to form a TiOx masking layer portion and a Ti masking layer portion;

etching the Ti layer to remove the Ti masking layer portion to form a TiOx pattern as a mask;

etching the metal layer using the TiOx pattern and removing the TiOx pattern to form a gate electrode; and

introducing ions to the semiconductor substrate to form source/drain regions.

52. The method of claim 51 , wherein the ions are introduced through the insulating layer.

53. The method of claim 51 , wherein etching the metal layer includes simultaneously etching of the insulating layer together with metal layer.

54. The method of claim 53 , wherein the ions are introduced directly into the semiconductor substrate.

55. A method for fabricating a semiconductor device, the method comprising:

depositing an insulating layer on a semiconductor substrate;

forming a metal layer on the insulating layer;

forming a TiO 2 layer on the metal layer;

irradiating light onto a portion of the TiO 2 layer to change a surface of the TiO 2 layer from hydrophobic to hydrophilic such that the TiO 2 layer has a hydrophobic surface and a hydrophilic surface;

etching a portion of TiO 2 layer having a hydrophobic surface to form a hydrophilic TiO 2 pattern;

etching the metal layer using the hydrophilic TiO 2 pattern as a mask to form a gate electrode; and

introducing ions to the semiconductor substrate to form source/drain regions.