Transparent oxide semiconductor thin film transistors
View Patent ↗Transistors fabricated with transparent oxide semiconductors are provided. The semiconductors are metal oxides deposited without the intentional incorporation of additional doping elements, and enable the fabrication of transparent thin film transistors. The transparent transistors can be used to control pixels in a display, without significantly reducing the active area of the pixels.
1. A transistor comprising a an undoped, transparent, metal oxide semiconductor electrically coupled between a source electrode and a drain electrode, and a gate electrode electrically coupled to said undoped transparent metal oxide semiconductor, such that the application of a bias to the gate electrode controls electric current flow in the undoped transparent metal oxide semiconductor between source and drain electrodes.
2. A flat panel display comprising one or an array of transparent oxide semiconductor transistors as recited in claim 1 .
3. An active matrix imager comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
4. A sensor comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
5. A rf price label comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
6. A rf identification tag comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
7. A rf inventory tag comprising an array of transparent oxide semiconductor transistors as recited in claim 1 .
8. The transistor of claim 1 deposited on a flexible substrate.
9. The transistor of claim 1 further comprising a gate electrode, and wherein said source, drain and gate electrodes are fabricated from a material selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide.
10. The transistor of claim 8 further comprising a gate dielectric fabricated from a material selected from the group consisting of zinc oxide, indium oxide, tin oxide, and cadmium oxide.
11. The transistor of claim 1 wherein said updoped, transparent metal oxide semiconductor comprises at least one oxide selected from: zinc oxide, indium oxide, tin oxide, and cadmium oxide.