Method for forming pattern using printing process

1. A method for forming a pattern over a substrate, comprising:

forming a self-aligned monolayer SAM layer on a substrate having an etching layer thereon;

locating a master having a convex pattern over the substrate;

pressing the master against the substrate until the convex pattern of the master directly contacts the etching layer;

forming a self-aligned monolayer pattern on the etching layer exposing a portion of a surface over the substrate by separating the master from the substrate, wherein the portion of the surface has a width substantially the same as the convex portion of the master; and

etching the etching layer using the self-aligned monolayer pattern as a mask.

2. The method of claim 1 , wherein the removing a portion of the SAM layer is performed by separating the master from the substrate.

3. The method of claim 1 , further comprising:

forming a gate electrode and a gate line on a substrate;

forming a gate insulating layer on the gate electrode and the gate line;

forming a semiconductor layer on the gate insulating layer;

forming source/drain electrodes and a data line on the semiconductor layer; and

forming a passivation layer on the substrate.

4. The method of claim 1 , wherein the SAM layer is formed of a self-aligned monolayer material.

5. The method of claim 4 , wherein the forming of a SAM layer comprises:

dissolving self-aligned monolayer molecules in ethanol;

dipping the substrate into the self-aligned monolayer molecules dissolved ethanol.

6. The method of claim 4 , wherein the SAM layer has a thickness of tens of angstroms (Å).

7. The method of claim 6 , wherein the insulating layer is one of SiOx or SiNx.

8. The method of claim 1 , wherein the etching layer is an insulating layer.

9. The method of claim 1 , wherein the etching layer is a semiconductor layer.

10. The method of claim 1 , wherein the etching layer is a metal layer.