Method of manufacturing a TFT array panel for a LCD
View Patent ↗A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.
1. A method of manufacturing a TFT array panel of a liquid crystal display, said method comprising the steps of:
forming a substrate, a transparent conducting metal layer being formed on the substrate, and then a first masking process being processing for defining at least a gate electrode, a storage capacitor electrode, and a transparent conducting electrode;
forming a first metal wiring layer by using a selective deposition method for implementing a wiring layout of the gate electrode, the storage capacitor electrode, a dielectric layer, an A-Si layer, and a poly-Si layer being deposited in order;
processing a second masking process to form the a contact window of the transparent conducting electrode;
processing a third masking process for defining a source/drain, and depositing a second metal wiring layer;
etching the poly-Si layer, and channeling the first metal wiring layer and the second metal wiring layer; and
processing deposition to form a passivation layer, and disclosing the parts of the transparent conducting electrode.
2. The method of manufacturing TFT-LCD array panel according to claim 1 , wherein said transparent conducting metal layer is made of ITO or IZO.
3. The method of manufacturing TFT-LCD array panel according to claim 1 , wherein said first metal wiring layer is made of Al, Cu, Ag, Mo, Cr, Ti, W, or other alloy materials.
4. The method of manufacturing TFT-LCD array panel according to claim 1 , wherein the first metal wiring layer is a multi-layer metal wiring layer.
5. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is made of Al, Cu, Ag, Mo, Cr, Ti, or W.
6. The method of forming TFT-LCD array panel according to claim 1 , wherein the first masking process, the second masking process and the third masking process, include lithography etching.
7. The method of manufacturing a TFT-LCD array panel according to claim 1 , wherein the deposition method of the A-Si layer, the transparent conducting layer, or gate electrode uses PVD, Low pressure CVD, or plasma enhanced CVD.
8. The method of manufacturing a TFT-LCD array panel according to claim 1 , wherein the selective deposition method uses the a selective conducting wiring layout to deposit metal.
9. The method of manufacturing a TFT-LCD array panel according to claim 1 , wherein the passivation layer can be made of SiO 2 , silicon nitride material, organic materials.
10. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is made of alloy material.
11. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is made of alloys of Al, Cu, Ag, Mo, Cr, Ti, or W.
12. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is made of low resistance materials.
13. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is a multilayer structure.
14. The method of forming TFT-LCD array panel according to claim 1 , wherein said second metal wiring layer is a multilayer structure comprising Al, Cu, Ag, Mo, Cr, Ti, or W.