Semiconductor integrated circuit device and method of producing the same
View Patent ↗A semiconductor integrated circuit device has: a layer insulating film formed on a semiconductor substrate; a fuse portion which is configured by an uppermost metal wiring layer that is formed on the layer insulating film; an inorganic insulating protective film which is formed on the metal wiring layer and the layer insulating film; and an organic insulating protective film which is formed on the inorganic insulating protective film. An opening is formed in the organic insulating protective film so that the inorganic insulating protective on the fuse portion is exposed. According to this configuration, it is not required to etch away the layer insulating film in order to form an opening above the fuse portion. Therefore, the time period required for forming the opening can be shortened and the whole production time period can be shortened. Since only the inorganic insulating protective film is formed above the fuse portion, the cutting off of the fuse portion can be performed without excessively increasing the irradiation energy of a laser beam. Therefore, high reliability and high productivity can be realized without causing the lowering of the reliability and the reduction of the production yield which are due to the cutting off of the fuse portion. Since the fuse portion is covered with the inorganic insulating protective film, the moisture resistance can be improved.
1. A semiconductor integrated circuit device having a fuse portion for cutting off electrically using laser beam irradiation, said device comprising:
an insulating film formed over a semiconductor substrate,
a metal wiring layer formed over said insulating film to provide said fuse portion, wherein said metal wiring layer comprises at least a barrier metal layer formed over said insulating film and a main conducting metal layer formed over said barrier metal layer.
2. A semiconductor integrated circuit device according to claim 1 , wherein said barrier metal layer comprises one of a single film such as a titanium nitride (TiN) film, a titanium (Ti) film and a tungsten nitride (WN) film.
3. A semiconductor integrated circuit device according to claim 1 , wherein said barrier metal layer has a thickness of 150 nm or less.
4. A semiconductor integrated circuit device according to claim 2 , wherein said barrier metal layer has a thickness of 150 nm or less.
5. A semiconductor integrated circuit device according to claim 1 , wherein said main conducting metal layer is made primarily of aluminum.
6. A semiconductor integrated circuit device according to claim 2 , wherein said main conducting metal layer is made primarily of aluminum.
7. A semiconductor integrated circuit device according to claim 3 , wherein said main conducting metal layer is made primarily of aluminum.
8. A semiconductor integrated circuit device according to claim 4 , wherein said main conducting metal layer is made primarily of aluminum.
9. A semiconductor integrated circuit device according to claim 1 , wherein said metal wiring layer of said fuse portion is further provided with an antireflection film formed on said main conducting metal layer.
10. A semiconductor integrated circuit device according to claim 1 , wherein said semiconductor integrated circuit device comprises a plurality of metal wiring layers; and said metal wiring layer of said fuse portion is an uppermost metal wiring layer among the plurality of metal wiring layers.
11. A semiconductor integrated circuit device according to any one of claims 1 to 10 , wherein a wiring width of said fuse portion where cutting off is to be performed is not smaller than 0.1 μm and not larger than 1.0 μm.
12. A semiconductor integrated circuit device according to claim 1 , wherein said barrier metal layer further comprises a multi-layered film including a combination of at least two of a titanium nitride (TiN) film, a titanium (Ti) film and a tungsten nitride (WN) film.