One mask PT/PCMO/PT stack etching process for RRAM applications

1. A method of dry etching a PCMO stack, comprising:

preparing a substrate;

depositing a barrier layer;

depositing a bottom electrode;

depositing a PCMO thin film;

depositing a top electrode;

depositing a hard mask layer;

applying photoresist and patterning;

etching the hard mask layer;

dry etching the top electrode;

dry etching the PCMO layer in a multi-step etching process; wherein said dry etching the PCMO layer includes a two-step etching process, wherein the first etching step includes etching the PCMQ layer using a gas mixture of Ar, O 2 , and a gas taken from the group of gases consisting of Cl 2 , BCl 3 , CCl 4 , SiCl 4 , and a combination thereof, wherein the percentage of the oxygen is in range of between about 1% to 50%, in a preferred range of between about 5% to 30% the percentage of Ar is in a range of between about 5% to 80%, and in preferred range of between about 40% to 80%; and wherein the remaining gas component consists of a Cl-containing gas, and which further includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.; and wherein the second PCMO etching step includes etching the PCMO layer using a gas mixture consisting Ar and O 2 , wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; and the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and which further includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr; at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500°°C.;

dry etching the bottom electrode; and

completing the PCMO-based device.

2. The method of claim 1 wherein said dry etching the top electrode includes etching using a gas mixture of Ar, O 2 , and a gas taken from the group of gases consisting of Cl 2 , BCl 3 , CCl 4 , SiCl 4 , and a combination thereof, wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and wherein the remaining gas component consists of a Cl-containing gas.

3. The method of claim 2 wherein said dry etching includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr, at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.

4. The method of claim 1 wherein said first etching step and said second etching step are alternately applied until the PCMO is etched.

5. The method of claim 1 wherein said dry etching the bottom electrode includes etching using a gas mixture of Ar, O 2 , and a gas taken from the group of gases consisting of Cl 2 , BCl 3 , CCl 4 , SiCl 4 , and a combination thereof, wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and wherein the remaining gas component is comprised of a Cl-containing gas.

6. The method of claim 5 wherein said dry etching includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr; at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.

7. The method of claim 1 which further includes depositing a layer of Ti, having a thickness in the range of between about 5 nm to 50 nm between the top electrode and the hard mask to enhance the adhesion of the hard mask.

8. A method of dry etching a PCMO stack, comprising:

preparing a substrate;

depositing a barrier layer;

depositing a bottom electrode;

depositing a PCMO thin film;

depositing a top electrode;

depositing a hard mask layer;

applying photoresist and patterning;

etching the hard mask layer

dry etching the top electrode;

dry etching the PCMO layer in a multi-step etching process, including a first etching step using an etching chemistry consisting of Ar, O 2 , and a chlorine-containing gas, and a second etching step uses an etching chemistry consisting of Ar and O 2 ;

dry etching the bottom electrode;

wherein said dry etching of the top electrode, of the bottom electrode and the first PCMO etching step includes etching using a gas mixture of Ar, O 2 , and a gas taken from the group of gases consisting of Cl 2 , BCl 3 , CCl 4 , SiCl 4 , and a combination thereof, wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and wherein the remaining gas component is comprised of a Cl-containing gas; and

completing the PCMO-based device.

9. The method of claim 8 wherein said dry etching of the top electrode, of the bottom electrode and the first PCMO etching step includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr, at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.

10. The method of claim 8 wherein the second etching step includes etching the PCMO layer using a gas mixture consisting of Ar and O 2 , wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; and the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and which further includes providing a gas-flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W, and at a substrate temperature of between about −50° C. to 500° C.

11. The method of claim 8 wherein said first etching step and said second etching step are alternately applied until the PCMO is etched.

12. The method of claim 8 which further includes depositing a layer of Ti, having a thickness in the range of between about 5 nm to 50 nm between the top electrode and the hard mask to enhance the adhesion of the hard mask.

13. A method of dry etching a PCMO stack, comprising:

preparing a substrate;

depositing a barrier layer;

depositing a bottom electrode;

depositing a PCMO thin film;

depositing a top electrode;

depositing a hard mask layer;

applying photoresist and patterning;

etching the hard mask layer;

dry etching the top electrode;

dry etching the PCMO layer in a multi-step etching process, including a first etching step using an etching chemistry consisting of Ar, O 2 and a chlorine-containing gas, and a second etching step uses an etching chemistry consisting of Ar and O 2 ;

dry etching the bottom electrode; and

completing the PCMO-based device.

14. The method of claim 13 wherein said dry etching of the top electrode, of the bottom electrode and the first PCMO etching step includes etching using a gas mixture of Ar, O 2 , and a gas taken from the group of gases consisting of Cl 2 , BCl 3 , CCl 4 , SiCl 4 , and a combination thereof, wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and wherein the remaining gas component is comprised of a Cl-containing gas.

15. The method of claim 14 wherein said dry etching of the top electrode, of the bottom electrode and the first PCMO etching step includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr; at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.

16. The method of claim 13 wherein the second etching step includes etching the PCMO layer using a gas fixture consisting of Ar and O 2 , wherein the percentage of the oxygen is in a range of between about 1% to 50%, in a preferred range of between about 5% to 30%; and the percentage of Ar is in a range of between about 5% to 80%, and in a preferred range of between about 40% to 80%; and which further includes providing a gas flow rate of between about 20 sccm to 100 sccm, and a preferred flow rate of between about 40 sccm to 70 sccm; at a pressure of between about 1 mTorr and 50 mTorr, and a preferred pressure of between about 3 mTorr to 10 mTorr at a microwave power of between about 400 W to 1000 W, and a substrate RF bias power is between about 10 W to 1000 W; and at a substrate temperature of between about −50° C. to 500° C.

17. The method of claim 13 wherein said first etching step and said second etching step are alternately applied until the PCMQ is etched.