Beam adjusting sample, beam adjusting method and beam adjusting device
A beam adjusting sample having a flat surface being like a plate and having two edges orthogonal to each other is employed. A beam is applied to the beam adjusting sample to detect an amount of the beam passing through the beam adjusting sample. The beam vertically scans the two edges.
1. A beam adjusting sample including a flat surface being like a plate and having at least two edges in which adjacent edges are orthogonal to each other as viewed from above the beam adjusting sample,
wherein a microstructure including latex balls is attached on the surface of the beam adjusting sample, and
wherein a film of an element having a high electron stopping power is coated on a surface of the microstructure, wherein the thickness of the film is 100 nm or more.
2. The beam adjusting sample according to claim 1 , wherein the beam adjusting sample is defined by the two edges, and has a through hole penetrating in the thickness direction.
3. The beam adjusting sample according to claim 1 , wherein the two edges are two edges at the beam adjusting sample end.
4. The beam adjusting sample according to claim 1 wherein the attached microstructure is located near the through hole.
5. The beam adjusting sample according to claim 1 wherein the film is of one element W, Ta, Mo, Pt of high atomic number.
6. The beam adjusting sample according to claim 1 wherein the through hole is located near a central part of the sample.
7. The beam adjusting sample according to claim 2 , wherein an inner side face of the through hole is formed at an angle smaller than or equal to 90 degrees to the surface of the beam adjusting sample.
8. A beam adjusting device comprising: stage for laying a beam adjusting sample as claimed in claim 1 ;
a beam generator for applying a beam onto the beam adjusting sample;
a secondary electron detector for detecting a secondary electron generated by applying the beam;
a position detector for detecting the position of the beam adjusting sample; and
a beam detector disposed under the stage, wherein the beam detector detects an amount of electron beam passing through the beam adjusting sample.
9. The beam adjusting device according to claim 8 , wherein the beam adjusting sample is defined by the two edges, and has a through hole penetrating in a thickness direction, and the beam generator applies the electron beam to have a scan direction changed over the through hole.
10. The beam adjusting device according to claim 8 , wherein the two edges of the beam adjusting sample are two edges at the end of the beam adjusting sample, and the beam generator applies the beam to have the scan direction changed over the beam adjusting sample or outside the beam adjusting sample.
11. The beam adjusting device according to claim 8 , wherein the beam generator applies the beam onto a microstructure placed on the surface of the beam adjusting sample.
12. The beam adjusting device according to claim 11 , wherein a film of an element having a high electron stopping power is coated on the surface of the microstructure.