IP Library › Granted Patent US 6,893,785
Granted Patent B2
US 6,893,785 · App. 10/684,391 · Granted May 17, 2005

Method of manufacturing an electronic device and a semiconductor integrated circuit device

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Quick Facts
Patent No.
US 6,893,785
App. No.
10/684,391
Granted
May 17, 2005
Kind
B2
Abstract

A method of manufacturing an electronic device, such as a high-speed semiconductor integrated circuit device, provides improved dimensional accuracy in transferring fine patterns. Photolithography for gate patterns and wiring patterns is carried out by exposing a halftone phase-shift mask having shade areas made of resist with an oblique illumination system, and photolithography for contact hole patterns is carried out by using a photomask having a metal shade film with metal alignment wafer marks.

Claims (14)

1. A method of manufacturing an electronic device, comprising:

providing a halftone phase-shift mask having a halftone phase-shift pattern formation area including a circuit pattern with plurality of holes arranged on an optically transmissive plate, and a resist shade film disposed outside the pattern formation area and having portions arranged to embrace at least part of the pattern formation area; and

illuminating the mask, thereby transferring the circuit pattern to a photosensitive film provided on a surface of a workpiece.

2. A method of manufacturing an electronic device according to claim 1 , wherein different adjacent areas in the photosensitive film provided on the surface of the workpiece are repeatedly exposed in such a way that a pattern of the resist film is transferred in a partially overlapping manner.

3. A method of manufacturing an electronic circuit device according to claim 1 , wherein the resist shade film surrounds the pattern formation area.

4. A method of manufacturing an electronic device, comprising:

providing a photomask having a circuit pattern including a plurality of holes formed in a circuit pattern formation area on an optically transmissive plate, and a resist shade film provided in an area outside the pattern formation area and having portions arranged to embrace at least part of the circuit pattern formation area to filter out exposure light; and

transferring the circuit pattern a plurality of times to different transfer locations on a photosensitive film provided on a main surface of a workpiece, by exposing the workpiece to incident light through the photomask in a stepped or scanned manner, such that transfer areas on the workpiece corresponding to the resist film partially overlap for different exposures.

5. A method of manufacturing an electronic circuit device according to claim 4 , wherein the resist shade film surround the pattern formation area.

6. A method of manufacturing an electronic device, comprising:

providing a halftone phase-shift mask having a halftone phase-shift pattern including a plurality of holes provided in a pattern formation area on an optically transmissive plate, and a resist shade film provided outside the pattern formation area and having portions arranged to embrace at least part of the pattern formation area;

mounting the halftone phase-shift mask on a projection aligner with the resist shade film being kept from touching a mask transportation and support system; and

exposing the pattern a plurality of times, with light incident through the mask, onto different adjacent areas of a photosensitive film provided on a surface of a workpiece in such a way that transfer areas on the photosensitive film corresponding to the resist film are partially overlapping for different exposures.

7. A method of manufacturing an electronic circuit device according to claim 6 , wherein the resist shade film surrounds the pattern formation area.