IP Library › Granted Patent US 6,846,598
Granted Patent B2
US 6,846,598 · App. 10/686,723 · Granted Jan 25, 2005

Manufacturing method of photomask and photomask

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Quick Facts
Patent No.
US 6,846,598
App. No.
10/686,723
Granted
Jan 25, 2005
Kind
B2
Abstract

In order to shorten the time required to change or correct a mask pattern over a mask, light-shielding patterns formed of a resist film for integrated circuit pattern transfer are partly provided over a mask substrate constituting a photomask in addition to light-shielding patterns formed of a metal for the integrated circuit pattern transfer.

Claims (4)

1. A photomask comprising:

light-shielding patterns formed of a metal for integrated circuit pattern transfer; and

light-shielding patterns formed of a resist film for the integrated circuit pattern transfer,

both said light-shielding patterns formed of a metal and said light-shielding patterns formed of a resist film being provided over a mask substrate, and wherein an antistatic film is provided over the mask substrate.

Assignments (2)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 25, 2011
From: HITACHI, LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 026109/0528 →