IP Library › Granted Patent US 6,897,086
Granted Patent B2
US 6,897,086 · App. 10/688,448 · Granted May 24, 2005

Image sensor and method for fabricating the same

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Quick Facts
Patent No.
US 6,897,086
App. No.
10/688,448
Granted
May 24, 2005
Kind
B2
Abstract

A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.

Claims (18)

1. A method for fabricating a CMOS image sensor, comprising the steps of:

a) providing a semiconductor structure;

b) forming an insulating layer on the semiconductor structure;

c) selectively etching the insulating layer to form a trench;

d) coating a dyed photoresist on the insulating layer, wherein the dyed photoresist covers the trench;

e) carrying out an exposure operation and a development operation on the dyed photoresist to thereby obtain a color filter pattern; and

f) performing a thermal treatment, so that the color filter pattern develops a convex shape.

2. The method as recited in claim 1 , wherein the semiconductor structure includes a light sensing element and a peripheral circuit.

3. The method as recited in claim 2 , wherein the light sensing element is a photodiode.

4. The method as recited in claim 1 , wherein the trench is filled with air through the thermal treatment.

5. A method for fabricating a CMOS image sensor, comprising the steps of:

a) providing a semiconductor substrate;

b) forming a photodiode in the semiconductor substrate;

c) forming an insulating layer on the semiconductor structure;

d) selectively etching the insulating layer to form a trench over the photodiode;

e) coating a dyed photoresist on the insulating layer, wherein the dyed photoresist covers the trench;

f) carrying out an exposure operation and a development operation on the dyed photoresist to thereby obtain a color filter patter; and

g) performing a thermal treatment, so that the color filter pattern develops a convex shape and the trench is filled with air.