Method of fabricating liquid crystal display device

1. A method of fabricating a liquid crystal display device, comprising:

forming a thin film transistor in a pixel region and a pad on an edge region of a first substrate;

depositing an organic passivation layer over the first substrate; and

removing the organic passivation layer in the edge region using a diffraction mask to expose a portion of the pad, wherein the diffraction mask has a slit portion including a plurality of slits having different widths.

2. The method of claim 1 , wherein the organic passivation layer is formed of one of benzo cyclo butene (BCB) and photo-acryl.

3. The method of claim 1 , wherein the removing the organic passivation comprises,

depositing a photoresist layer on the organic passivation layer in the edge region;

placing the diffraction mask having first and second light transmission regions over the photoresist layer for a light exposure, so that the first light transmission region transmits an amount of light greater than the second light transmission region;

developing the photoresist layer to completely remove the photoresist layer corresponding to the second light transmission region and to retain the photoresist layer corresponding to the first light transmission region;

etching the organic passivation layer to remove a part of the organic passivation layer corresponding to the second light transmission region;

removing the retained photoresist layer corresponding to the first light transmission region; and

etching the organic passivation layer to remove the organic passivation layer in the first and second light transmission regions.

4. The method of claim 3 , wherein the diffraction mask of the second transmission region has a slit width greater than that of the first transmission region.

5. The method of claim 3 , wherein the diffraction mask of the second light transmission region has a plurality of slits.

6. The method of claim 1 , wherein the forming a thin film transistor comprises,

forming a gate electrode on the first substrate;

depositing a gate insulating layer over the first substrate;

forming a semiconductor layer on the gate insulating layer; and

forming a source electrode and a drain electrode on the semiconductor layer.

7. The method of claim 1 , further comprising forming a metal layer on the exposed portion of the pad.

8. The method of claim 7 , wherein the metal layer is formed of one of indium tin oxide (ITO) and indium zinc oxide (IZO).

9. The method of claim 1 , further comprising:

forming a black matrix and a color filter layer on a second substrate;

forming a sealant on the edge region of the first substrate and attaching the first and second substrates to each other; and

forming a liquid crystal layer between the first and second substrates.

10. A method of fabricating a liquid crystal display device, comprising:

forming a thin film transistor in a pixel region and a pad on an edge region of a first substrate;

depositing an organic passivation layer over the first substrate;

depositing a photoresist layer on the organic passivation layer in the edge region;

placing the diffraction mask having first and second light transmission regions over the photoresist layer for a light exposure, so that the first light transmission region transmits an amount of light greater than the second light transmission region;

developing the photoresist layer to completely remove the photoresist layer of the second light transmission region and to remain the photoresist layer of the first light transmission region;

etching the organic passivation layer to remove a part of the organic passivation layer of the second light transmission region;

removing the photoresist layer; and

etching the organic passivation layer to remove a remaining organic passivation layer.

11. The method of claim 10 , wherein the organic passivation layer is formed of one of benzo cyclo butene (BCB) and photo-acryl.

12. The method of claim 10 , wherein the diffraction mask of the second transmission region has a slit width greater than that of the first transmission region.

13. The method of claim 10 , wherein the diffraction mask of the second light transmission region has a plurality of slits.

14. The method of claim 10 , wherein the forming a thin film transistor comprises,

forming a gate electrode on the first substrate;

depositing a gate insulating layer over the first substrate;

forming a semiconductor layer on the gate insulating layer; and

forming a source electrode and a drain electrode on the semiconductor layer.

15. The method of claim 10 , further comprising forming a metal layer on the exposed portion of the pad.

16. The method of claim 15 , wherein the metal layer is formed of one of indium tin oxide (ITO) and indium zinc oxide (IZO).

17. The method of claim 10 , further comprising:

forming a black matrix and a color filter layer on a second substrate;

forming a sealant on the edge region of the first substrate and attaching the first and second substrates to each other; and

forming a liquid crystal layer between the first and second substrates.