IP Library › Granted Patent US 7,289,547
Granted Patent B2
US 7,289,547 · App. 10/697,815 · Granted Oct 30, 2007

Laser and detector device

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Quick Facts
Patent No.
US 7,289,547
App. No.
10/697,815
Granted
Oct 30, 2007
Kind
B2
Abstract

A detector is disposed on the passive side of a laser to detect photon leakage through the passive side mirror and measure as current created in the detector via a Schottky contact.

Claims (30)

1. A laser-based device comprising:

a VCSEL-type laser having an active side and a passive side opposite the active side; and

a photodetector unit on the passive side, the photodetector unit comprising

an absorbing region located so as to receive leakage photons exiting the laser through the passive side, and

a Schottky contact having a first portion abutting the absorbing region and through which a current, caused by absorption of the leakage photons in the absorbing, can be measured and a substrate located between a second portion of the Schottky contact and the absorbing region.

2. The device of claim 1 further comprising:

a substrate abutting the active side.

3. The device of claim 2 wherein the substrate comprises:

an access way over at least a portion of the active side so that, when the laser emits light through the active side, the emission will pass through the access way.

4. The device of claim 1 wherein the absorbing region comprises

a substrate on which the laser was grown.

5. The device of claim 1 wherein the laser is a top emitting laser.

6. The device of claim 1 wherein the laser is a bottom emitting laser.

7. The device of one of claims 1 - 4 and 5 - 6 further comprising:

an electronic circuit chip hybridized to the laser.

8. The device of claim 7 further comprising:

a planarizing dielectric located between at least a portion of the electronic circuit chip and the laser.

9. The device of one of claims 1 - 4 and 5 - 6 wherein the active side comprises an active side mirror and wherein the active side mirror is doped so as to be p-type.

10. The device of one of claims 1 - 4 and 5 - 6 wherein the active side comprises an active side mirror and wherein the active side mirror is doped so as to be n-type.

11. The device of claim 1 wherein the absorbing region is a semi-insulating material.

12. The device of claim 11 wherein the semi-insulating material comprises:

Gallium Arsenide.

13. The device of claim 11 wherein the semi-insulating material is less than two microns in thickness.

14. The device of claim 11 wherein the semi-insulating material is about 1 micron in thickness.

15. The device of one of claims 1 - 4 and 5 - 6 wherein the active side comprises an active side mirror and wherein the active side mirror comprises at least one of a carbon dopant, a berrilium dopant or a zinc dopant.

16. The device of claim 15 wherein the active side mirror comprises:

AluminumGalliumArsenide.

17. The device of one of claims 1 - 4 and 5 - 6 wherein the passive side comprises a passive side mirror and wherein the passive side mirror comprises at least one of a silicon dopant or a tellurium dopant.

18. The device of claim 17 wherein the active side mirror comprises:

AluminumGalliumArsenide.