Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same

1. A method of reworking an alignment film of a liquid crystal display device, comprising the steps of:

forming an organic protective film on a substrate;

forming a silicon nitride layer having a first etch rate on the organic protective film;

forming a first alignment film on the silicon nitride layer;

detecting at least one irregularity of the first alignment film formed on the silicon nitride layer;

eliminating the first alignment film with a second etch rate different from the first etch rate of the silicon nitride layer; and

forming a second alignment film on the silicon nitride layer.

2. The method according to claim 1 , wherein the silicon nitride layer includes hydrogen.

3. The method of according to claim 1 , wherein the step of eliminating the first alignment film includes dry-etching during rework processing.

4. The method according to claim 1 , further including the steps of:

forming a gate line and a gate electrode on the substrate;

forming a gate insulating film on the gate line, the gate electrode and the substrate;

forming a semiconductor layer on the gate insulating film; and

forming a data line, a source electrode and a drain electrode on the gate insulating film.

5. The method according to claim 4 , further including the step of forming a pixel electrode on the silicon nitride layer to overlap at least one of the data line and the gate line.

6. The method according to claim 3 , wherein the dry-etching is carried out by using at least one compound gas of SF 6 , O 2 , O 2 +Cl 2 , and CF 4 .

7. The method according to claim 6 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:50.

8. The method according to claim 6 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:70.

9. The method according to claim 6 , wherein the dry-etching includes a radio frequency power of about 500–1500 W.