Liquid crystal display device and fabricating method thereof, and reworking method of alignment film using the same

1. A method of fabricating a liquid crystal display device, comprising the steps of:

forming an organic insulating film on a substrate;

forming an alignment film having a first etch rate on the organic insulating film; and

forming a silicon nitride layer having a second etch rate between the alignment film and the organic insulating film,

wherein the first etch rate is different from the second etch rate.

2. The method according to claim 1 , further including eliminating the alignment film by dry-etching during rework processing.

3. The method according to claim 2 , wherein the dry-etching is carried out by using at least one compound gas of SF 6 , O 2 +Cl 2 , and CF 4 .

4. The method according to claim 3 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:50.

5. The method according to claim 3 , wherein a ratio of the compound gas is at least about SF 6 :O 2 =1:70.

6. The method according to claim 3 , wherein the dry-etching uses a radio frequency power of about 500-1500 W.

7. The method according to claim 1 , wherein the silicon nitride layer includes hydrogen.

8. The method according to claim 1 , further including the steps of:

forming a gate line and a gate electrode on the substrate;

forming a gate insulating film on the gate line, the gate electrode and the substrate;

forming a semiconductor layer on the gate insulating film; and

forming a data line, a source electrode and a drain electrode on the gate insulating film.

9. The method according to claim 8 , further including the step of forming a pixel electrode on the silicon nitride layer to overlap at least one of the data line and the gate line.