Method of forming non-stoichiometric nanoscale powder comprising temperature-processing of a stoichiometric metal compound
View Patent ↗Nanotechnology methods for creating stoichiometric and non-stoichiometric substances with unusual combination of properties by lattice level composition engineering are described. The modified properties described include electrical conductivity, dielectric constant, dielectric strength, dielectric loss, polarization, permittivity, critical current, superconductivity, piezoelectricity, mean free path, curie temperature, critical magnetic field, permeability, coercive force, magnetostriction, magnetoresistance, hall coefficient, BHmax, critical temperature, melting point, boiling point, sublimation point, phase transformation condition, vapor pressure, anisotropy, adhesion, density, hardness, ductility, elasticity, porosity, strength, toughness, surface roughness, coefficient of thermal expansion, thermal conductivity, specific heat, latent heat, refractive index, absorptivity, emissivity, dispersivity, scattering, polarization, acidity, basicity, catalysis, reactivity, energy density, activation energy, free energy, entropy, frequency factor, bioactivity, biocompatibility, thermal coefficient of any property and pressure coefficient of any property.
1. A method of forming a non-stoichiometric nanoscale powder having one or more modified properties comprising:
selecting a powder form of a stoichiometric metal compound comprising at least one metal and at least one element selected from the group consisting of: C, O, N, B, S, H, Se, Te, In, Sb, Al, Ni, F, P, Cl, Br, I, Si, and Ge;
adding at least one dopant element to the metal compound to form a mixture, wherein the at least one dopant element has a valency different than a valency of an electropositive element in the metal compound;
processing the mixture at a temperature greater than the solid state reaction temperature of the mixture to produce a non-stoichiometric nanoscale powder form of a substance comprising the at least one dopant element and the metal compound, wherein the at least one dopant element is combined in the lattice of the metal compound and wherein the resulting compound comprises three or more elements;
wherein combining the at least one dopant element into the lattice of the metal compound modifies at least one property of the metal compound; and
the nanoscale powder form of the substance is substantially compositionally uniform.
2. The method of claim 1 wherein the at least one metal in the metal compound is selected from the group consisting of Ti, Mn, Fe, Ni, Zn, Cu, Sr, Y, Zr, Ta, W, Se, V, Co, In, Li, Hf, Nb, Mo, Sn, Sb, Al, Ce, Pr, Be, Np, Pa, Gd, Dy, Os, Pt, Pd, Ag, Eu, Er, Yb, Ba, Ga, Cs, Na, K, Mg, Pm, Pr, Ni, Bi, Tl, Ir, Rb, Ca, La, Ac, Re, Hg, Cd, As, Tb, Nd, Th, Md, and Au.
3. The method of claim 1 wherein the at least one dopant element is combined into the lattice in a concentration greater than 1% over the stoichiometric values.
4. The method of claim 1 wherein the property is selected from the group consisting of: electrical conductivity, dielectric constant, dielectric strength, dielectric loss, polarization, permittivity, critical current, superconductivity, piezoelectricity, mean free path, curie temperature, critical magnetic field, permeability, coercive force, magnetostriction, magnetoresistance, hall coefficient, BHmax, critical temperature, melting point, boiling point, sublimation point, phase transformation condition, vapor pressure, anisotropy, adhesion, density, hardness, ductility, elasticity, porosity, strength, toughness, surface roughness, coefficient of thermal expansion, thermal conductivity, specific heat, latent heat, refractive index, absorptivity, emissivity, dispersivity, scattering, polarization, acidity, basicity, reactivity, energy density, activation energy, free energy, entropy, frequency factor, bioactivity, biocompatibility, thermal coefficient of any property and pressure coefficient of any property.
5. The method of claim 1 wherein the processing comprises one or more of steps selected from the group consisting of: heating in inert atmosphere, heating in oxidizing atmosphere and heating in reducing atmosphere.
6. The method of claim 1 wherein the processing modifies one or more of the following characteristics of the nanoscale powders: shape, surface area, morphology, surface characteristics, surface composition, size distribution and degree of agglomeration.
7. The method of claim 1 wherein the processing comprises a combustion step.
8. The method of claim 1 wherein the processing comprises plasma processing.
9. The method of claim 1 wherein the processing comprises a quench step after the mixture reaches the solid state reaction temperature.
10. The method of claim 1 wherein the at least one dopant element has a valency different than at least two metals in the metal compound.
11. The method of claim 1 wherein the nanoscale powder has an aspect ratio greater than 1.
12. A method of forming a non-stoichiometric nanoscale powder comprising:
selecting a powder form of a stoichiometric metal compound comprising at least one metal and at least one element selected from the group consisting of C, O, N, B, S, H, Se, Te, In, Sb, Al, Ni, F, P, Cl, Br, I, Si, and Ge;
adding at least one dopant element to the metal compound to form a mixture, wherein the at least one dopant element has a valency different than a valency of an electropositive element in the metal compound;
processing the mixture at a temperature greater than the solid state reaction temperature of the mixture to produce a non-stoichiometric nanoscale powder form of a substance comprising the at least one dopant element and the metal compound, wherein the at least one dopant element is combined in the lattice of the metal compound and wherein the resulting compound comprises three or more elements;
wherein combining the at least one dopant element into the lattice of the metal compound modifies at least one property of the metal compound; and
the nanoscale powder form of the substance exhibits a gradient composition.
13. The method of claim 12 wherein the at least one metal in the metal compound is selected from the group consisting of Ti, Mn, Fe, Ni, Zn, Cu, Sr, Y, Zr, Ta, W, Sc, V, Co, In, Li, Hf, Nb, Mo, Sn, Sb, Al, Ce, Pr, Be, Np, Pa, Gd, Dy, Os, Pt, Pd, Ag, Eu, Er, Yb, Ba, Ga, Cs, Na, K, Mg, Pm, Pr, Ni, Bi, Tl, Ir, Rb, Ca, La, Ac, Re, Hg, Cd, As, Th, Nd, Tb, Md, and Au.
14. The method of claim 12 wherein the at least one dopant element is combined into the lattice in a concentration greater than 1% over the stoichiometric values.
15. The method of claim 12 wherein the property is selected from the group consisting of: electrical conductivity, dielectric constant, dielectric strength, dielectric loss, polarization, permittivity, critical current, superconductivity, piezoelectricity, mean free path, curie temperature, critical magnetic field, permeability, coercive force, magnetostriction, magnetoresistance, hall coefficient, BHmax, critical temperature, melting point, boiling point, sublimation point, phase transformation condition, vapor pressure, anisotropy, adhesion, density, hardness, ductility, elasticity, porosity, strength, toughness, surface roughness, coefficient of thermal expansion, thermal conductivity, specific heat, latent heat, refractive index, absorptivity, emissivity, dispersivity, scattering, polarization, acidity, basicity, reactivity, energy density, activation energy, free energy, entropy, frequency factor, bioactivity, biocompatibility, thermal coefficient of any property and pressure coefficient of any property.
16. The method of claim 12 wherein the processing comprises one or more of steps selected from the group consisting of heating in inert atmosphere, heating in oxidizing atmosphere and heating in reducing atmosphere.
17. The method of claim 12 wherein the processing comprises a combustion step.
18. The method of claim 12 wherein the processing comprises plasma processing.
19. The method of claim 12 wherein the processing comprises a quench step after the mixture reaches the solid state reaction temperature.
20. The method of claim 12 wherein the at least one dopant element has a valency different than at least two metals in the metal compound.
21. The method of claim 12 wherein the nanoscale powder has an aspect ratio greater than 1.
22. The method of claim 12 wherein the processing modifies one or more of the following characteristics of the nanoscale powders: shape, surface area, morphology, surface characteristics, surface composition, size distribution and degree of agglomeration.