Semiconductor laser device and method of fabricating the same
View Patent ↗There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.
1. A method of fabricating a semiconductor laser device, forming a plurality of laser portions on a single substrate, each of the laser portions oscillating laser light of a different wavelength, wherein a laser portion previously formed and a laser portion subsequently formed are formed by different crystal growth methods, respectively,
and further, wherein the laser portion previously formed contains p type dopant having a diffusion coefficient smaller than that of p type dopant in the laser portion subsequently formed.
2. The method of claim 1 , wherein one of the crystal growth methods is metal-organic chemical vapor deposition.
3. The method of claim 2 , wherein one of the crystal growth methods is molecular beam epitaxy.
4. The method of claim 1 , the laser portion previously formed is grown by molecular beam epitaxy.
5. The method of claim 1 , wherein the laser portion previously formed contains p type dopant of beryllium.
6. The method of claim 5 , wherein the laser portion subsequently formed contains p type dopant of one of zinc, carbon or magnesium.
7. The method of claim 1 , wherein maximum and minimum temperatures of a substrate in growing a crystal for the laser portion previously formed is respectively higher than those of the substrate in growing a crystal for the laser portion subsequently formed.
8. The method of claim 7 , wherein the minimum temperature of the substrate in growing the crystal for the laser portion previously formed is higher than the maximum temperature of the substrate in growing the crystal for the laser portion subsequently formed.
9. The method of claim 7 , wherein for the laser portion previously formed a crystal is grown by metal-organic chemical vapor deposition.
10. The method of claim 7 , wherein the laser portion previously formed contains p type dopant of one of zinc, carbon or magnesium.
11. The method of claim 7 , wherein the laser portion subsequently formed contains p type dopant of beryllium.
12. The method of claim 1 , wherein the laser portion previously formed is formed mainly of an AlGaAs based crystal and the laser portion subsequently formed is formed mainly of an AlGaInP based crystal.
13. The method of claim 1 , wherein the laser portion previously formed is formed mainly of an AlGaInP based crystal and the laser portion subsequently formed is formed mainly of an AlGaAs based crystal.