Method of defining features on materials with a femtosecond laser
View Patent ↗The invention relates to a pulsed laser ablation method of metals and/or dielectric films from the surface of a wafer, printed circuit board or a hybrid substrate. By utilizing a high-energy ultra-short pulses of laser light, such a method can be used to manufacture electronic circuits and/or electro-mechanical assemblies without affecting the material adjacent to the ablation zone.
1. A method for defining features on films arranged on substrates, comprising:
providing a substrate having a film arranged on said substrate,
selectively removing a predetermined depth of said film by directing a plurality of ultra-short laser pulses having a predetermined pulse repetition rate and a predetermined peak power onto a localized ablation zone on said film; and
directing said plurality of laser pulses onto a plurality of predetermined ablation zones with a precision of producing line deviations of less than about 0.1 microns, wherein said plurality of predetermined ablation zones define a pattern of said film without affecting the material adjacent to said ablation zone.
2. The method of claim 1 , wherein said pattern produces an integrated circuit.
3. The method of claim 2 , wherein a plurality of said integrated circuits can be arranged to produce a hybrid integrated module.
4. The method of claim 1 , wherein said pattern produces a plurality of chip slappers on a Herman.
5. The method of claim 1 , wherein said film comprises a dielectric.
6. The method of claim 1 , wherein said film comprises a metal.
7. The method of claim 6 , wherein said metal includes at least one from: Al (Aluminum), Ga (gallium), and In (Indium).
8. The method of claim 6 , wherein said metal includes at least one transition metal selected from: Sc (Scandium), Ti (titanium), V (Vanadium), Cr (chromium), Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), Cu (Copper), Zn (Zinc), Yt (Yttrrium), Zr (zirconium), Nb (Niobium), Mo (molybdenum), Ru (Ruthenium), Rh (rhodium), Pd (palladium), Ag (Silver), Cd (Cadmium), Hf (hafnium), Ta (tantalum), W (tungsten), Re (Rhenium), Os (Osmium), Ir (Iridium), Pt (platinum), and Au (Gold).
9. The method of claim 6 , wherein said metal includes at least one lanthanide or actinide metal selected from: La (lanthanum), Gd (Gadolinium), Nd (neodymium), Sm (Samarium), Ce (Cerium), Er (Erbium), and Yb (Ytterbium).
10. The method of claim 1 , wherein said substrate includes a dielectric.
11. The method of claim 1 , wherein said substrate is selected from alumina, aluminum nitride, GaAs, Sapphire and silicon.
12. The method of claim 1 , wherein said pattern is produced in an atmosphere of less than about 140 mTorr.
13. The method of claim 1 , wherein said laser pulses comprise a polarization selected from: circular, elliptical, and linear polarization.
14. The method of claim 1 , wherein said pulses include wavelengths between about 250 nm and about 11 microns.
15. A method for defining features and/or cutting substrates, comprising:
providing a substrate,
selectively removing a predetermined depth of said substrate by directing a plurality of ultra-short laser pulses having a predetermined pulse repetition rate and a predetermined peak power onto a localized ablation zone on said substrate; and
directing said plurality of laser pulses onto a plurality of predetermined ablation zones on said substrate with a precision of producing line deviations of less than about 0.1 microns, wherein said plurality of predetermined ablation zones produces a predetermined pattern and/or cuts on said substrate without affecting the material adjacent to said ablation zone.
16. The method of claim 15 , wherein said substrate includes a dielectric.
17. The method of claim 16 , wherein said substrate includes a material having a dielectric constant greater than about 3.9.
18. The method of claim 15 , wherein said pattern is produced in an atmosphere of less than about 140 mTorr.
19. A method for defining features on films arranged on substrates, comprising:
providing a substrate comprising a film arranged on said substrate, wherein said film can be arranged to comprise at least one lanthanide or actinide metal selected from: La (lanthanum), Gd (Gadolinium), Nd (neodymium), Sm (Samarium), Ce (Cerium), Er (Erbium), and Yb (Ytterbium),
selectively removing a predetermined depth of said film by directing a plurality of ultra-short laser pulses having a predetermined pulse repetition rate and a predetermined peak power onto a localized ablation zone on said film; and
directing said plurality of laser pulses onto a plurality of predetermined ablation zones, wherein said plurality of predetermined ablation zones define a pattern of said film without affecting the material adjacent to said ablation zone.
20. The method of claim 19 , wherein said pattern produces an integrated circuit.
21. The method of claim 20 , wherein a plurality of said integrated circuits can be arranged to produce a hybrid integrated module.
22. The method of claim 19 , wherein said film comprises a dielectric.
23. The method of claim 19 , wherein said substrate includes a dielectric.
24. The method of claim 19 , wherein said substrate comprises at least one substrate selected from alumina, aluminum nitride, GaAs, Sapphire and silicon.
25. The method of claim 19 , wherein said pattern is produced in an atmosphere of less than about 140 mTorr.