Method of forming photosensitive film pattern
View Patent ↗The present invention relates to a method of forming a photosensitive film pattern. It provides a method of forming a photosensitive film pattern capable of performing a photolithography process by blocking an opening of a high aspect ratio trench with a DFR film, during forming a semiconductor element and an MEMS element. In addition, it is possible to prevent the photoresist from flowing into the trench when the liquid photoresist is deposited by a spin coating method to form the photosensitive film pattern for metal pattern to apply electric signal from outside to inside of trench.
1. A method of forming a photosensitive film pattern, comprising steps of:
laminating a DFR film on a top of a substrate, thereby covering an opening of a trench of a high aspect ratio formed in the substrate;
forming a DFR film pattern for blocking the opening of the trench by performing a first photolithography process, thereby forming a resultant structure; and
forming the photosensitive film pattern by depositing a liquid photoresist on the resultant structure and performing a second photolithography process.
2. The method of forming a photosensitive film pattern according to claim 1 , wherein the DFR film is deposited to have a thickness in a range of 1 to 70 μm at a temperature in a range of 70 to 100° C. by using an adhesive lamination method in a conventional printed circuit board industry.
3. The method of forming a photosensitive film pattern according to claim 1 , wherein the DFR film consists of three layers, a base film, a photosensitive layer and a cover film.
4. The method of forming a photosensitive film pattern according to claim 1 , wherein the DFR film is a photosensitive film including a polymer binder with an excellent viscosity and photosensitivity.
5. The method of forming a photosensitive film pattern according to claim 1 , in said first photolithography process, an exposure process is performed by using a reticle for forming the trench.
6. The method of forming a photosensitive film pattern according to claim 5 , wherein in the exposure process, an exposing focal length of the DFR film is set to be longer than the focal length at the time of forming the trench, so that said patterned DFR film is slightly larger than the opening of the trench.
7. The method of forming a photosensitive film pattern according to claim 1 , wherein the trench has a depth in a range of 1to 1000 μm.
8. A method of forming a photosensitive film pattern, comprising steps of:
forming a two-step trench having a high aspect ratio in a substrate;
laminating a DFR film on a top of the substrate, thereby covering an opening of the trench;
forming a DFR film pattern for blocking the opening of the trench by performing a first photolithography process, thereby forming a resultant structure; and
forming the photosensitive film pattern by depositing a liquid photoresist on the resultant structure and performing a second photolithography process.
9. The method of forming a photosensitive film pattern according to claim 8 , wherein the DFR film is deposited to have a thickness in a range of 1 to 70 μm at a temperature in a range of 70 to 100° C. by using an adhesive lamination method in a conventional printed circuit board industry.
10. The method of forming a photosensitive film pattern according to claim 8 , wherein the DFR film consist of three layers, a base film, a photosensitive layer and cover film.
11. The method of forming a photosensitive film pattern according to claim 8 , wherein the DFR film is a photosensitive film including a polymer binder with an excellent viscosity and photosensitivity.
12. The method of forming a photosensitive film pattern according to claim 8 , in said first photolithography process, an exposing process is performed by using a reticle for forming the trench.
13. The method of forming a photosensitive film pattern according to claim 12 , wherein in the exposing process, an exposing focal length of the DFR film is set to be longer than the focal length at the time of forming the trench, so that said patterned DFR film is slightly larger than the opening of the trench.
14. The method of forming a photosensitive film pattern according to claim 1 , wherein the high aspect ratio structure trench has a depth in a range of 1 to 1000 μm.
15. A method of forming a photosensitive film pattern, comprising steps of:
forming a highly stepped trench having a high aspect ratio in a substrate;
forming a metal film on the substrate including inside of the trench;
laminating a DFR film on a top of the substrate, thereby covering an opening of the trench;
forming a DFR film pattern for blocking the opening of the trench by performing a first photolithography process, thereby forming a resultant structure; and
forming the photosensitive film pattern by depositing a liquid photoresist on the resultant structure and performing a second photolithography process.
16. The method of forming a photosensitive film pattern according to claim 15 , wherein the DFR film is deposited to have a thickness in a range of 1 to 70 μm at a temperature in a range of 70 to 100° C. by using an adhesive lamination method in a conventional printed circuit board industry.
17. The method of forming a photosensitive film pattern according to claim 15 , wherein the DFR film consist of three layers, a base film, a photosensitive layer and cover film.
18. The method of forming a photosensitive film pattern according to claim 15 , wherein the DFR film is a photosensitive film including a polymer binder with an excellent viscosity and photosensitivity.
19. The method of forming a photosensitive film pattern according to claim 15 , in said first photolithography process, an exposing process is performed by using a reticle for forming the trench.
20. The method of forming a photosensitive film pattern according to claim 19 , wherein in the exposing process, an exposing focal length of the DFR film is set to be longer than the focal length at the time of forming the trench, so that said patterned DFR film is slightly larger than the opening of the trench.