Mask for laser irradiation, method of manufacturing the same, and apparatus for laser crystallization using the same
View Patent ↗A mask for laser irradiation includes a base substrate, a laser beam shielding pattern on a first surface of the base substrate, wherein the laser beam shielding pattern is made of an opaque metallic material and has laser beam transmitting portions spaced apart from each other, and an anti-thermal oxidation layer covering the laser beam shielding pattern, wherein a second surface of the base substrate is an incident surface of a laser beam.
1. A mask for laser irradiation, comprising:
a base substrate;
a laser beam shielding pattern on a first surface of the base substrate, wherein the laser beam shielding pattern is made of an opaque metallic material and has laser beam transmitting portions spaced apart from each other; and
an anti-thermal oxidation layer covering the laser beam shielding pattern;
wherein a second surface of the base substrate is an incident surface of a laser beam.
2. The mask according to claim 1 , wherein the anti-thermal oxidation layer has a passband that passes the wavelength of the laser beam.
3. The mask according to claim 1 , further comprising an anti-reflecting layer on the second surface of the base substrate.
4. The mask according to claim 3 , wherein the anti-reflecting layer has a passband that passes the wavelength of the laser beam.
5. The mask according to claim 1 , wherein the laser beam transmitting portions have slit shapes.
6. The mask according to claim 1 , wherein the laser beam shielding pattern forms a single pattern.
7. The mask according to claim 1 , wherein the anti-thermal oxidation layer includes an organic material.
8. The mask according to claim 1 , wherein the anti-thermal oxidation layer reduces reflectance of a laser beam.
9. The mask according to claim 1 , wherein the base substrate includes quartz.
10. A method of manufacturing a mask for laser irradiation, comprising:
forming a laser beam shielding pattern on a first surface of a base substrate by using an opaque metallic material, wherein the laser beam shielding pattern has laser beam transmitting portions spaced apart from each other; and
forming an anti-thermal oxidation layer covering the laser beam shielding pattern;
wherein a second surface of the base substrate is an incident surface of a laser beam.
11. The method of claim 10 , wherein the anti-thermal oxidation layer has a passband that passes the wavelength of laser beam.
12. The method according to claim 10 , further comprising a step of forming an anti-reflecting layer on the second surface of the base substrate.
13. The method of claim 12 wherein, the anti-reflecting layer has a passband that passes the wavelength of the laser beam.
14. The method according to claim 12 , wherein the anti-reflecting layer includes an organic material.
15. The method according to claim 14 , wherein the anti-reflecting layer is formed through a coating method, wherein the anti-reflecting layer has a desired reflective index and thickness.
16. The method according to claim 10 , wherein the anti-thermal oxidation layer reduces reflectance of a laser beam.
17. The method according to claim 16 , wherein the anti-thermal oxidation layer is formed through a coating method, wherein the anti-thermal oxidation layer has a desired reflective index and thickness.
18. An apparatus for crystallization of amorphous silicon, comprising:
a laser beam source emitting a laser beam;
an attenuator that adjusts an intensity of the laser beam;
a homogenizer that adjusts a uniformity of the laser beam;
a mask including:
a base substrate;
a laser beam shielding pattern on a first surface of the base substrate, wherein the laser beam shielding pattern is made of an opaque metallic material and has laser beam transmitting portions spaced apart from each other; and
an anti-thermal oxidation layer covering the laser beam shielding pattern;
wherein a second surface of the base substrate is an incident surface of a laser beam; and
a translation stage on which the amorphous silicon is loaded.
19. The apparatus according to claim 18 , wherein the anti-thermal oxidation layer has a passband that passes the wavelength of the laser beam.
20. The apparatus according to claim 18 , wherein the mask further includes an anti-reflecting layer on the second surface of the base substrate.
21. The apparatus according to claim 20 , wherein the anti-reflecting layer has a passband that passes the wavelength of the laser beam.
22. The apparatus according to claim 18 , wherein the laser beam transmitting portions have slit shapes.
23. The apparatus according to claim 18 , wherein the anti-thermal oxidation layer includes an organic material.
24. The apparatus according to claim 18 , wherein the anti-thermal oxidation layer reduces reflectance of a laser beam.