Micro-fluid ejecting device having embedded memory device
View Patent ↗A semiconductor substrate for a micro-fluid ejecting device. The semiconductor substrate includes a plurality of fluid ejection devices disposed on the substrate. A plurality of driver transistors are disposed on the substrate for driving the plurality of fluid ejection devices. A programmable memory matrix containing embedded programmable memory devices is operatively connected to the micro-fluid ejecting device for collecting and storing information on the semiconductor substrate for operation of the micro-fluid ejecting device. The programmable memory matrix provides a high density of memory bits embedded on the substrate for storing information about the micro-fluid ejecting device.
1. A substrate for a micro-fluid ejecting device, the substrate comprising:
a plurality of fluid ejection devices;
a plurality of driver devices for driving the plurality of fluid ejection devices;
a nonvolatile programmable memory matrix containing embedded programmable memory devices, the matrix capable of being operatively connected to the micro-fluid ejecting device for storing information for operation of the micro-fluid ejecting device, wherein the memory matrix is erasable by ultraviolet light; and
a layer disposed adjacent the nonvolatile programmable memory matrix, said layer having properties sufficient to block ultraviolet light having a wavelength below about 400 nanometers.
2. The substrate of claim 1 wherein the embedded programmable memory devices comprise transistors selected from the group consisting of PMOS and NMOS floating gate transistors.
3. The substrate of claim 1 wherein the embedded programmable memory devices have a memory density of greater than about 200 bits per square millimeter.
4. The substrate of claim 1 wherein the programmable memory matrix comprises floating gate transistors.
5. The substrate of claim 1 wherein the programmable memory matrix comprises more than 128 memory devices.
6. The substrate of claim 1 wherein the embedded programmable memory devices are programmable by applying a voltage of greater than about 8 volts for at least about 100 microseconds.
7. The substrate of claim 1 wherein the embedded programmable memory devices will pass from about 10 to about 200 microamps of current at about 2 volts in a programmed state.
8. The substrate of claim 1 wherein the embedded programmable memory devices will pass less than 3 microamps of current at about 2 volts in an unprogrammed state.
9. A printhead for an ink jet printer containing the substrate of claim 1 .
10. The printhead of claim 9 wherein the layer comprises a material selected from the group consisting of a photoresist material and a metal.
11. The printhead of claim 9 wherein the layer comprises a polyimide nozzle plate.
12. An ink jet printer cartridge for an ink jet printer comprising:
a cartridge body having an ink supply source; and
a printhead attached to the cartridge body in fluid communication with the ink supply source,
the printhead comprising:
a substrate having a plurality of ink ejection devices;
a plurality of driver devices for driving the plurality of ink ejection devices;
a nonvolatile programmable memory matrix containing embedded programmable memory devices, the matrix being operatively connected to the ink jet printer for storing information for operation of the printer wherein the memory matrix is erasable by ultraviolet light;
a photoresist layer disposed adjacent the programmable memory matrix, said photoresist layer having properties sufficient to block ultraviolet light having a wavelength below about 400 nanometers; and
a nozzle plate attached to the substrate for ejecting ink therefrom upon activation of the ink ejection devices.
13. The ink jet printer cartridge of claim 12 wherein the embedded programmable memory devices comprise transistors selected from the group consisting of PMOS and NMOS floating gate transistors.
14. The ink jet printer cartridge of claim 12 wherein the embedded programmable memory devices have a memory density of greater than about 200 bits per square millimeter.
15. The ink jet printer cartridge of claim 12 wherein the programmable memory matrix comprises floating gate transistors.
16. The ink jet printer cartridge of claim 12 wherein the programmable memory matrix comprises more than 128 memory devices.
17. The ink jet printer cartridge of claim 12 wherein the embedded programmable memory devices are programmable by applying a voltage of greater than about 8 volts for at least about 100 microseconds.
18. The ink jet printer cartridge of claim 12 wherein the embedded programmable memory devices will pass from about 10 to about 200 microamps of current at about 2 volts in a programmed state.
19. The ink jet printer cartridge of claim 12 wherein the embedded programmable memory devices will pass less than 3 microamps of current at about 2 volts in an unprogrammed state.
20. The ink jet printer cartridge of claim 12 wherein the nozzle plate comprises a polyimide nozzle plate having properties sufficient to block ultraviolet light having a wavelength below about 400 nanometers.