Methods and devices for providing bias to a monolithic microwave integrated circuit
View Patent ↗In general, the present invention provides an RF signal amplification system having an improved layout. The size of the MMIC can be reduced without loss of functionality and/or additional functionality can be added to the MMIC without increasing the size of the MMIC. The MMIC is configured with an off-chip bias feed system. The MMIC is configured with landing zones for receiving a bond wire such that on-chip bias circuitry can be reduced and/or eliminated.
1. A MMIC having transistors, a RF input, a RF output, and a RF matching structure, wherein said MMIC is configured to receive DC bias feed, from off the MMIC, directly at the RF matching structure; wherein said RF input is in electrical communication with said transistors, wherein said transistors are in electrical communication with said RF matching structure, and wherein said RF matching structure is in electrical communication with said RF output.
2. A MMIC having transistors, a RF input, a RF output, and a RF matching structure, wherein said transistors are configured to receive one of a plurality of DC bias feeds, and wherein at least one of the plurality of DC bias feeds is not received to the MMIC at the edge of the MMIC; wherein said RF input is in electrical communication with said transistors, wherein said transistors are in electrical communication with said RF matching structure, and wherein said RF matching structure is in electrical communication with said RF output.
3. A MMIC having transistors, a RF input, a RF output, and a RF matching structure, wherein said RF matching structure is prepared with an ohmic material to receive said bias feed directly from off the MMIC; wherein said RF input is in electrical communication with said transistors, wherein said transistors are in electrical communication with said RF matching structure, and wherein said RF matching structure is in electrical communication with said RF output.
4. A MMIC having transistors and a RF matching structure; wherein said transistors and RF matching structure lie in a plane, wherein said RF matching structure is prepared with a material to receive said bias feed from a direction out of said plane of the MMIC chip; wherein said RF input is in electrical communication with said transistors, wherein said transistors are in electrical communication with said RF matching structure, and wherein said RF matching structure is in electrical communication with said RF output.
5. The MMIC of claim 4 , wherein said material is at least one of an ohmic material and a metal.