IP Library › Patent Application 10711446
Patent Application
App. No. 10/711,446

SPUTTERING APPARATUS AND MANUFACTURING METHOD OF METAL LAYER/METAL COMPOUND LAYER BY USING THEREOF

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Quick Facts
Patent No.
US None
App. No.
10/711,446
Abstract

A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

Claims (21)

1 . A manufacturing method of metal/metal compound layer, comprising:

placing a wafer in a chamber;

forming a metal layer on the wafer;

forming a metal compound layer over the metal layer in the chamber; and

controlling a sidewall temperature of the chamber to be kept at about 50° C.˜70° C. during the steps of forming the metal layer and the metal compound layer.

2 . The manufacturing method of claim 1 , wherein the step of forming the metal layer comprises forming a titanium layer.

3 . The manufacturing method of claim 1 , wherein the step of forming the metal compound layer comprises forming a titanium nitride layer.

4 . The manufacturing method of claim 1 , wherein the step of forming the metal layer on the wafer comprises supplying argon to the chamber.

5 . The manufacturing method of claim 1 , wherein the step of forming the metal layer on the wafer comprises performing magnetron DC sputtering.

6 . The manufacturing method of claim 1 , wherein the step of forming the metal compound layer over the metal layer in the chamber comprises supplying nitrogen and argon to the chamber.

7 . The manufacturing method of claim 1 , wherein the step of forming the metal compound layer over the metal layer in the chamber comprises performing reactive sputtering.

8 . The manufacturing method of claim 1 , wherein the step of controlling the sidewall temperature of the chamber to be kept at about 50° C. 70° C. during the steps of forming the metal layer and the metal compound layer comprises:

measuring the sidewall temperature of the chamber; and

controlling a flow rate of cooling water based on the sidewall temperature so as to keep the sidewall temperature of the chamber at about 50° C.˜70° C.

9 . A manufacturing method of titanium/titanium nitride, comprising:

placing a wafer in a chamber;

performing magnetron DC sputtering process in the chamber to form a titanium layer on the wafer;

performing reactive sputtering process in the chamber to form a titanium nitride layer over the titanium layer; and

controlling a sidewall temperature of the chamber to be kept at about 50° C.˜70° C. during the processes to form the titanium layer and the titanium nitride layer.

10 . The manufacturing method of claim 9 , wherein the step of performing magnetron DC sputtering process in the chamber to form the titanium layer on the wafer comprises supplying argon to the chamber.

11 . The manufacturing method of claim 9 , wherein the step of performing reactive sputtering process in the chamber to form the titanium compound layer over the titanium layer comprises supplying nitrogen and argon to the chamber.