Solid-state image sensor for improving sensing quality and manufacturing method thereof
View Patent ↗A method of forming a solid-state image sensor is provided. The method includes the steps of forming a plurality of photosensor elements on a substrate; forming a plurality of color filters on the plurality of photosensors; forming a light blocking member between adjacent color filters; and forming a plurality of microlenses on the plurality of color filters. Each photosensor with each corresponding color filter and microlens is used for receiving an incident light of specific spectrum.
1. A method of forming a solid-state image sensor, comprising the steps of:
forming a plurality of photosensor elements on a substrate;
forming a plurality of color filters on the plurality of photosensors;
forming a light blocking member between adjacent color filters; and
forming a plurality of microlenses on the plurality of color filters;
wherein each photosensor corresponds to each color filter and each microlens, for receiving an incident light of specific spectrum.
2. The method of claim 1 , wherein the light blocking member comprises a light-impervious film made of metal or chemical compound.
3. The method of claim 1 , wherein the image sensor is a charge-coupled device (CCD).
4. The method of claim 1 , wherein the image sensor is a CMOS sensor.
5. A solid-state image sensor which is produced according to the method of claim 1 .