Rectifying charge storage device with bi-stable states
A rectifying charge storage device, consisting of diode and capacitor components which share common elements, includes a bi-stable state element responsive to an input signal for opening or closing a circuit, as by changing to one of two definable stable states. The bi-stable state element may comprise the diode or capacitor components, or both, of the rectifying charge storage device, and may be designed for irreversible or reversible operation.
1. A rectifying charge storage device, comprising:
a rectifier structure fabricated with a common conductor forming a side of the rectifier structure; and
a capacitor structure fabricated as a single unitary structure with the rectifier structure such that the capacitor structure incorporates the common conductor of the rectifier structure as a side of the capacitor structure, the capacitor structure to receive the rectified current from the rectifier structure over the common conductor;
one of said rectifier structure and said capacitor structure including a bi-stable state element responsive to an input signal for changing from a first definable state to a second definable state for altering the electrical characteristics of the device.
2. The rectifying charge storage device of claim 1 , wherein said bi-stable state element is responsive to said input signal for reversibly changing between said first and second definable states.
3. The rectifying charge storage device of claim 1 , wherein said bi-stable state element is responsive to said input signal for irreversibly changing between said first and second definable states.
4. The rectifying charge storage device of claim 1 , wherein said bi-stable state element is incorporated into said rectifier structure.
5. The rectifying charge storage device of claim 1 , wherein said bi-stable state element is incorporated into said capacitor structure.
6. The rectifying charge storage device of claim 1 , wherein said bi-stable state element comprises a switching diode.
7. The rectifying charge storage device of claim 1 , wherein said bi-stable state element comprises a break diode.
8. The rectifying charge storage device of claim 1 , wherein said bi-stable state element comprises a switching capacitor.
9. The rectifying charge storage device of claim 1 , wherein said bi-stable state element comprises a break capacitor.
10. The rectifying charge storage device of claim 1 , wherein said first definable state comprises an open circuit condition, and said second definable state comprises a closed circuit condition.
11. The rectifying charge storage device of claim 1 , wherein said first definable state comprises a closed circuit condition, and said second definable state comprises an open circuit condition.
12. The rectifying charge storage device of claim 1 , wherein said first definable state comprises a more-conductive condition, and said second definable state comprises a less-conductive condition.
13. The rectifying charge storage device of claim 1 , wherein said first definable state comprises a less-conductive condition, and said second definable state comprises a more conductive condition.
14. A rectifying charge storage device, comprising:
a rectifier;
a common conductor connected to one side of said rectifier;
a capacitor incorporating said common conductor;
said rectifier, common conductor and capacitor comprising a unitary element; and
a bi-stable state element responsive to an input signal for changing from a first definable state to a second definable state for altering the electrical characteristics of the device.
15. The rectifying charge storage device of claim 14 , wherein said bi-stable state element is responsive to said input signal for reversibly changing between said first and second definable states.
16. The rectifying charge storage device of claim 14 , wherein said bi-stable state element is irreversible.
17. The rectifying charge storage device of claim 14 , wherein said bi-stable state element is incorporated into said rectifier structure.
18. The rectifying charge storage device of claim 14 , wherein said bi-stable state element is incorporated into said capacitor structure.
19. The rectifying charge storage device of claim 14 , wherein said bi-stable state element comprises a switching diode.
20. The rectifying charge storage device of claim 14 , wherein said bi-stable state element comprises a break diode.
21. The rectifying charge storage device of claim 14 , wherein said bi-stable state element comprises a switching capacitor.
22. The rectifying charge storage device of claim 14 , wherein said bi-stable state element comprises a break capacitor.
23. The rectifying charge storage device of claim 14 , wherein said first definable state comprises an open circuit condition, and said second definable state comprises a closed circuit condition.
24. The rectifying charge storage device of claim 14 , wherein said first definable state comprises a closed circuit condition, and said second definable state comprises an open circuit condition.
25. The rectifying charge storage device of claim 14 , wherein said first definable state comprises a conductive condition, and said second definable state comprises a non-conductive condition.
26. The rectifying charge storage device of claim 14 , wherein said first definable state comprises a non-conductive condition, and said second definable state comprises a conductive condition.