Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
View Patent ↗The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF 4 +O 2 can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF 6 +HCl (+He) or SF 6 +Cl 2 (+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF 4 , CHF 3 , CHClF 2 , CH 3 F, and C 2 F 6 , yields good TFT characteristics, and H 2 plasma treatment can further improve the TFT characteristics.
1. A thin film transistor substrate for a display comprising:
a transparent insulating substrate;
a gate pattern including a gate line, a gate electrode and a gate pad formed on the transparent substrate;
a gate insulating layer covering the gate pattern;
an amorphous silicon layer on the gate insulating layer;
a data pattern including a data line, a data pad and a source and a drain electrode formed on the amorphous silicon layer;
a pixel electrode connected to the drain electrode,
wherein at least one of the gate pattern and the data pattern comprise a multi-layer structure including a Mo or Mo alloy layer, the multi-layer structure having a taper angle at its edge of 20-70 degrees.
2. The thin film transistor substrate of claim 1 , wherein each layer of the multi-layer structure has a taper angle at it edge of 20-70 degrees.
3. The thin film transistor substrate of claim 2 , wherein each layer of the multi-layer structure has a different taper angle from another layer.
4. The thin film transistor substrate of claim 1 , wherein the multi-layer structure includes an Al or an Al alloy layer.
5. The thin film transistor substrate of claim 4 , wherein the Al alloy includes one of a transition metal and rare earth metal, of less than 5% by atomic weight.
6. The thin film transistor substrate of claim 1 , wherein the Mo alloy includes tungsten of 0.01% to 20% by atomic weight.
7. A wiring for a display comprising:
a lower layer,
an upper layer, formed over the lower layer,
wherein the upper layer includes a Mo or Mo alloy layer, the lower layer having a taper angle at its edges of 20-70 degrees.
8. The wiring of claim 7 , wherein the lower layer includes an Al or Al alloy layer.
9. The wiring of claim 8 , wherein the Al alloy includes one of a transition metal and rare earth metal, of less than 5% by atomic weight.
10. The wiring of claim 7 , wherein the Mo alloy layer includes tungsten of 0.01% to 20% by atomic weight.
11. A thin film transistor substrate for a display comprising:
a transparent insulating substrate;
a gate pattern including a gate line, a gate electrode and a gate pad formed on the transparent substrate;
a gate insulating layer covering the gate pattern;
an amorphous silicon layer on the gate insulating layer;
a data pattern including a data line, a data pad and a source and a drain electrode formed on the amorphous silicon layer; and
a pixel electrode connected to the drain electrode,
wherein at least one of the gate pattern and the data pattern comprise a multi-layer structure including one of a Mo or a Mo alloy layer, and one of an Al or an Al alloy layer, each of the layers having a different taper angle.
12. The thin film transistor substrate of claim 11 , wherein the Mo alloy includes tungsten of 0.01% to 20% by atomic weight.
13. The thin film transistor substrate according to claim 11 , wherein the Al alloy includes one of a transition metal and rare earth metal, of less than 5% by atomic weight.