Plating using copolymer
View Patent ↗Method of plating using a polymeric barrier layer including a polyphenolic polymer which has a repeating unit of the formula: wherein R 1 , R 2 , R 3 , R 4 , and R 5 are individually hydrogen, a hydroxy group or an azo dye.
1. A method for plating, comprising:
coating a substrate with a barrier layer, wherein the barrier layer comprises an adhesive composition comprising a polyphenolic polymer, said polyphenolic polymer comprising repeating monomeric units having the formula:
wherein each of R 1 , R 2 , R 3 , R 4 , and R 5 are each individually a hydroxy group, hydrogen, or an azo dye moiety;
coating the barrier layer with a top layer comprising a photoresist;
imagewise exposing the top layer to radiation;
removing a portion of the top layer for exposing a portion of the barrier layer;
removing the exposed portion of the barrier layer for exposing a portion of the substrate, wherein removal of the exposed portion of the barrier layer does not create undercuts under the photoresist; and
plating a material on the exposed portion of the substrate.
2. A method as recited in claim 1 , wherein the substrate includes a seed layer, the barrier layer being formed on the seed layer.
3. A method as recited in claim 1 , wherein the barrier layer comprises 100% of the polyphenolic polymer.
4. A method as recited in claim 1 , wherein the barrier layer is spin coated on the substrate.
5. A method as recited in claim 1 , wherein the barrier layer is substantially formed in a monolayer.
6. A method as recited in claim 1 , wherein only one of R 1 , R 2 , R 3 , R 4 , and R 5 is hydroxyl.
7. A method as recited in claim 1 , wherein the exposed portion of the top layer is removed using a developer.
8. A method as recited in claim 7 , wherein the developer also removes the exposed portion of the barrier layer.
9. A method as recited in claim 1 , wherein removal of the exposed portion of the barrier layer creates undercuts under the photoresist.
10. A method as recited in claim 1 , wherein the barrier layer also functions as an antireflective coating.
11. A method for plating,
comprising,
coating a substrate with a barrier layer, wherein the barrier layer comprises an adhesive composition comprising a polyphenolic polymer, said polyphenolic polymer comprising repeating monomeric units having the formula:
wherein each of R 1 , R 2 , R 3 , R 4 , and R 5 are each individually a hydroxy group, hydrogen, or an azo dye moiety;
coating the barrier layer with a top layer comprising a photoresist;
imagewise exposing the top layer to radiation;
removing a portion of the top layer for exposing a portion of the barrier layer;
removing the exposed portion of the barrier layer for exposing a portion of the substrate; and
plating a material on the exposed portion of the substrate,
wherein the exposed portion of the top layer is removed using a developer,
wherein the developer does not remove the exposed portion of the barrier layer.
12. A method as recited in claim 11 , wherein the exposed portion of the barrier layer is removed by reactive ion etching.
13. A method as recited in claim 11 , wherein the exposed portion of the barrier layer is removed by milling.
14. A method for plating, comprising:
coating a substrate with a barrier layer, wherein the barrier layer comprises an adhesive composition comprising a polyphenolic polymer, said polyphenolic polymer comprising repeating monomeric units having the formula:
wherein each of R 1 , R 3 , R 4 , and R 5 are each individually a hydroxy group, hydrogen, or an substituted azo group and R 6 is a methylene or substituted methylene group;
coating the barrier layer with top layer comprising a photoresist;
imagewise exposing the top layer to radiation;
removing a portion of the top layer for exposing a portion of the barrier layer;
removing the exposed portion of the barrier layer for a portion of the substrate; and
plating a material on the exposed portion of the substrate.
15. A method as recited in claim 14 , wherein the substrate includes a seed layer, the barrier layer being formed on the seed layer.
16. A method as recited in claim 14 , wherein the barrier layer comprises 100% of the polyphenolic polymer.
17. A method as recited in claim 14 , wherein the barrier layer is spin coated on the substrate.
18. A method as recited in claim 14 , wherein the barrier layer is substantially formed in a monolayer.
19. A method as recited in claim 14 , wherein only one of R 1 , R 3 , R 4 , and R 5 is hydroxyl.
20. A method as recited in claim 14 , wherein the exposed portion of the top layer is removed using a developer.
21. A method as recited in claim 20 , wherein the developer also removes the exposed portion of the barrier layer.
22. A method as recited in claim 20 , wherein the developer does not remove the exposed portion of the barrier layer.
23. A method as recited in claim 22 , wherein the exposed portion of the barrier layer is removed by reactive ion etching.
24. A method as recited in claim 22 , wherein the exposed portion of the barrier layer is removed by milling.
25. A method as recited in claim 14 , wherein removal of the exposed portion of the barrier layer does not create undercuts under the photoresist.
26. A method as recited in claim 14 , wherein removal of the exposed portion of the barrier layer creates undercuts under the photoresist.
27. A method as recited in claim 14 , wherein the barrier layer also functions as an antireflective coating.