Thin film transistor with LDD/offset structure
View Patent ↗A thin film transistor including a lightly doped drain (LDD) region or offset region, wherein the thin film transistor is formed so that primary crystal grain boundaries of a polysilicon substrate are not positioned in the LDD or offset region.
1. A thin film transistor (TFT) comprising:
a gate electrode; and
a polysilicon substrate comprising:
a channel region directly overlapping with the gate electrode in a top view;
lightly doped drain (LDD) or offset regions disposed in contact with opposing sides of the channel region;
source and drain regions disposed in contact with the LDD or offset regions, such that the LDD or offset regions and the channel region are disposed between the source and drain regions; and
primary crystal grain boundaries, wherein,
the primary crystal grain boundaries are disposed in the channel region and the source and drain regions, but are not disposed in the LDD or offset regions,
the source and drain regions are formed through a single ion implantation process,
a thickness of the channel region is substantially identical to a thickness of the source and drain regions, and
the channel region and the source and drain regions are disposed directly in the same plane.
2. The thin film transistor according to claim 1 , wherein the polysilicon substrate is formed by a sequential lateral solidification (SLS) method.
3. The thin film transistor according to claim 1 , wherein the thin film transistor is used in an LCD (liquid crystal display) or organic EL (electroluminescent) device.
4. The thin film transistor according to claim 1 , wherein the primary crystal grain boundaries are substantially perpendicular to a current direction between the source and drain regions of the thin film transistor.
5. A flat panel display device comprising:
a thin film transistor comprising:
a gate electrode; and
a polysilicon substrate comprising:
a channel region directly overlapping with the gate electrode in a top view;
offset regions disposed in contact with opposing sides of the channel region;
source and drain regions disposed in contact with the offset regions, such that the offset regions and the channel region are disposed between the source and drain regions; and
primary crystal grain boundaries, wherein,
the primary crystal grain boundaries are disposed in the channel region and the source and drain regions, but are not disposed in the offset regions,
the source and drain regions are formed through a single ion implantation process,
a thickness of the channel region is substantially identical to a thickness of the source and drain regions, and
the channel region and the source and drain regions are disposed directly in the same plane.
6. The flat panel display device according to claim 5 , wherein the polysilicon substrate is formed by a sequential lateral solidification (SLS) method.
7. The flat panel display device according to claim 5 , wherein the thin film transistor is used in an LCD (liquid crystal display) or organic EL (electroluminescent) device.
8. The flat panel display device according to claim 5 , wherein the primary crystal grain boundaries are substantially perpendicular to a current direction between the source and drain regions of the thin film transistor.